KOKUSAI-ELECTRIC (KE)

DD 802V H

QUIXACE II DOPED POLY

DJ 853V 8BL

QUIXACE II

QUIXACE II POLY

DJ-1223VN	

DJ-1206VN-DF

DD-812V

DJ 1236VN DF

QUIXACE II NITRIDE

"VERTRON-III(F3) Model Numbers:DD-823V/DJ-823V. Hitachi Kokusai Electric's Vertron-III series Vertical Diffusion/LPCVD systems have been developed especially for 200mm wafers which are predominantly used in high-volume-semiconductor device manufacturing. The Vertron-III platform offers solid reliability and provides superior cost of ownership (Co0)to our customers.
 
The Vertron-III offers all conventional films as well as the unique processes of BTBAS Si3N4, and Selective SiGe epitaxy. Hitachi Kokusai is recognized as a leader in thermal solutions and customer satisfaction."

DD-823V

QUIXACE is KOKUSAI ELECTRIC's latest platform for batch thermal processing of 300mm wafers. The QUIXACE offers high throughput by utilizing advanced technologies in such areas as temperature control, wafer handling automation, reactor purging, and temperature ramping.

QUIXACE

VR-70

"VERTRON-III(G) Model Numbers:DD-833V/DJ-833V. Hitachi Kokusai Electric's Vertron-III series Vertical Diffusion/LPCVD systems have been developed especially for 200mm wafers which are predominantly used in high-volume-semiconductor device manufacturing. The Vertron-III platform offers solid reliability and provides superior cost of ownership (Co0)to our customers.
 
The Vertron-III offers all conventional films as well as the unique processes of BTBAS Si3N4, and Selective SiGe epitaxy. Hitachi Kokusai is recognized as a leader in thermal solutions and customer satisfaction."

DJ 833V

"VERTRON-III(J3). Model Numbers: DD-853V/DJ-853V. Hitachi Kokusai Electric's Vertron-III series Vertical Diffusion/LPCVD systems have been developed especially for 200mm wafers which are predominantly used in high-volume-semiconductor device manufacturing. The Vertron-III platform offers solid reliability and provides superior cost of ownership (Co0)to our customers.
 
The Vertron-III offers all conventional films as well as the unique processes of BTBAS Si3N4, and Selective SiGe epitaxy. Hitachi Kokusai is recognized as a leader in thermal solutions and customer satisfaction."

DJ 853V

DJ 1206V-DF

QUIXACE ULTIMATE

DJ 1223V

QUIXACE II ALD NITRIDE 

DD 803V

DD-802V for diffusion.
The vertical reactor can accommodate 120 150mm wafers and up to 165 in the future.

DD-802V

DD1223V

CX 3000

QUIXACE ULTIMATE ALD SIN

DJ-1206VN-DM

DJ-1223 VN-DF

DJ-802V for LPCVD.
For LPCVD films, from 50 to 100 wafers are processed, depending on the film. 

DJ-802V

DJ 1207S-DD

"VERTRON-III(F3). Model Numbers: DD-823V/DJ-823V. Hitachi Kokusai Electric's Vertron-III series Vertical Diffusion/LPCVD systems have been developed especially for 200mm wafers which are predominantly used in high-volume-semiconductor device manufacturing. The Vertron-III platform offers solid reliability and provides superior cost of ownership (Co0)to our customers.
 
The Vertron-III offers all conventional films as well as the unique processes of BTBAS Si3N4, and Selective SiGe epitaxy. Hitachi Kokusai is recognized as a leader in thermal solutions and customer satisfaction."

DJ 823V

DJ-835V

QUIXACE II ANNEAL

DJ-1206VN	

QUIXACE II CURE

DD803

CX1204

QUIXACE ULTIMATE ALD SIO2

ZESTONE-III: DD-1223V

CX 3202

DD 853V

DD 1223VN

DD 1205V

CX 2000

"VERTRON-III(G) Model Numbers: DD-833V/DJ-833V. Hitachi Kokusai Electric's Vertron-III series Vertical Diffusion/LPCVD systems have been developed especially for 200mm wafers which are predominantly used in high-volume-semiconductor device manufacturing. The Vertron-III platform offers solid reliability and provides superior cost of ownership (Co0)to our customers.
 
The Vertron-III offers all conventional films as well as the unique processes of BTBAS Si3N4, and Selective SiGe epitaxy. Hitachi Kokusai is recognized as a leader in thermal solutions and customer satisfaction."

DD 833V

DD 823V-8BL

VERTRON DD-803V

***PARTS***

DJ 802

QUIXACE NITRIDE

Vertical furnace, HTO (High Temperature Oxide)

DD 853V-8BL

QUIXACE ULTIMATE ALD TIN

DJ-802V-H

DJ-813	

DJ 815V-8L

ADVANCED ACE-300

DJ-813V

DD-1206VN-DF

DJ1206VN

DD 853V-8BL2

DD1223VNP

DD-1206V-DF

DD 1236VN DF

VERTRON III

DJ 835-V-8L

VERTEX II

DD 823V-8PL

ZESTONE NITR

ZESTONE-V(B) DJ-1205V-DF

DJ-807S-8C

DD-1810N-DLS

500TC

QUIXACE-LV

ZESTONE- IIIC

ZESTONE-V(B) DJ-1205V

DJ803

DD-1223 V-DF 

QUIXACE DF

QUIXACE II TEOS

DD-802

DJ 1207S

DJ-1810N-DLS

Vertex-III(F)

CX 5000

VERTRON DJ-825V

QUIXACE ALDINNA

DD 853

DJ 1206-VN-DF

CX 9620

QUIXACE II ALD HIGH-K

DJ 1205V

DD 1206V DF

DJ 803V

DD 802V-B

DJ1223VN-CX3	

VERTRON Ⅲ DJ803

"VERTEX-(S2).Model Numbers: DD-835V/DJ-835VAs semiconductor devices becomes more highly integrated and miniaturized, it is necessary to control native oxide film growth on the wafer surface at the time of loading for applications such as formation of contact Poly-Si, capacitor nitride, ultra thin oxidation and selective oxidation, etc.
Hitachi Kokusai Electric recommends Load Lock vertical Diffusion/LPCVD Systems, Vertron-V, for these processes to utilize the unique oxygen free load lock chamber mounted directly underneath reactor tube."

KOKUSAI-ELECTRIC (KE)

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