说明
无说明配置
-Exposing source: KrF(Wavelength 248nm、Cymer ELS-7300) -Laser on another floor -Right side only Console -Surface illumination (standard): 36000[W/㎡]or more -R Type Inline direction -Reduction ratio： 1：4 -Throughput： AGA 8shot 110wafer/hour or more ※Step pitch 26nm×33mm，64 shot (300mm wafers) Exposure amount 300J/m2 -Resolution： 120nm or less -Alignment accuracy： 20nm or less (M+ 3σ) -Lighting NA： Three equipped with Squeezing ①NA：0.80/σ0.80 CONV ②NA：0.80/σ0.40 CONV ③NA：0.80/SiB2 -Projection lens NA： Variable 0.55~0.80 -Exposure range (Scan Field)：26×33mm -Wafer alignment： AGA(Off Axis Scope) -Reticle library： Max7sheet -Cool plate before exposure(WTC)： None -Options： 6"PPC Unit、6"Reticle Barcode Reader(2D)、Signal Tower(4color)、Relay FOUP UnitOEM 型号描述
The CANON FPA 5000 ES4 scanner is geared for both 200mm and 300mm wafer fabs. This lithography system is suitable for applications at the 100-nm (0.10-micron) and below. The FPA 5000-ES4 has high-throughput rates of 110 wafers per hour (wph) on 300mm and 160wph on 200mm. The s an expansion of Canon's high NA, 248-nm tools for mix-and-match applications文件
无文件
CANON
FPA-5000ES4
已验证
类别
193 nm Step and Scan
物品主要详细信息
状况：
Used
运行状况:
未知
产品编号：
24050
晶圆尺寸：
12"/300mm
年份：
2003
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
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CANON
FPA-5000ES4
已验证
类别
193 nm Step and Scan
上次验证： 60 多天前
物品主要详细信息
状况：
Used
运行状况:
未知
产品编号：
24050
晶圆尺寸：
12"/300mm
年份：
2003
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
说明
无说明配置
-Exposing source: KrF(Wavelength 248nm、Cymer ELS-7300) -Laser on another floor -Right side only Console -Surface illumination (standard): 36000[W/㎡]or more -R Type Inline direction -Reduction ratio： 1：4 -Throughput： AGA 8shot 110wafer/hour or more ※Step pitch 26nm×33mm，64 shot (300mm wafers) Exposure amount 300J/m2 -Resolution： 120nm or less -Alignment accuracy： 20nm or less (M+ 3σ) -Lighting NA： Three equipped with Squeezing ①NA：0.80/σ0.80 CONV ②NA：0.80/σ0.40 CONV ③NA：0.80/SiB2 -Projection lens NA： Variable 0.55~0.80 -Exposure range (Scan Field)：26×33mm -Wafer alignment： AGA(Off Axis Scope) -Reticle library： Max7sheet -Cool plate before exposure(WTC)： None -Options： 6"PPC Unit、6"Reticle Barcode Reader(2D)、Signal Tower(4color)、Relay FOUP UnitOEM 型号描述
The CANON FPA 5000 ES4 scanner is geared for both 200mm and 300mm wafer fabs. This lithography system is suitable for applications at the 100-nm (0.10-micron) and below. The FPA 5000-ES4 has high-throughput rates of 110 wafers per hour (wph) on 300mm and 160wph on 200mm. The s an expansion of Canon's high NA, 248-nm tools for mix-and-match applications文件
无文件
类似上架物品
查看全部无类似上架物品