Canon Inc. is the world’s largest camera manufacturer with a history spanning over 80 years, during which time they have made some of the most important innovations within both photographic and video technology.

KrF photolithography system supports high-volume manufacturing of semiconductor devices. The ES6a scanning stepper utilizes Canon’s Advanced Flexible Illumination System (AFIS) to resolve 90 nanometer features. 

CANON

FPA-6000ES6a

The Canon FPA-6000ES5 is a KrF (248nm) scanner built on Canon’s 300mm-ready FPA-6000 single-stage platform. It has an 0.80 numerical aperture and an ultra-low aberration 4:1 reduction lens system, capable of projecting IC features as small as 110nm. It is aimed at chip manufacturers moving processes to 110nm and 90nm nodes. The platform integrates two ultra-technologies, optical lithography and mechanical forces, to achieve an equal mastery of both.

FPA-6000ES5

"This step-and-scan system comes with a single stage lithography tool and 0.86 NA. It comes with NA KrF lens with 90nm. The Canon FPA-6000 ES6 can be configured for 200mm or 300mm wafers. Throughput for 300mm is ≥100wph (300mm,122shots) 
 and for 200mm is ≥ 170wph."

FPA-6000ES6

The FPA-3000EX4 is a Fine Pattern Aligner that uses a 1KHz KrF laser to create quarter micron images on silicon wafers. It has an illumination intensity of 2800 W/m2 and can process 73 wafers per hour. It features a new color touch-panel display, All-Axis Air Bearing FLAT Stage performance, and CQUEST II off-axis illumination capabilities. The EX4 is equipped with a Cymer 1 KHz KrF laser and can expose subquarter micron images while maintaining 35 nm stage stepping accuracy. It also has a variable numerical aperture (NA) and Canon’s ULTIMA lens manufacturing technique to limit distortions. The FPA-3000EX4 offers lithography solutions such as improved resist profiles and depth-of-focus, fast and accurate air bearing FLAT stage performance, low distortion and tight overlay alignment, repeatable alignment accuracy for Chemical Mechanical Polish (CMP) Wafers, and improved chip yields and focus reliability with its edge-shot optimized tilt focusing system (CCD-OPTF II). Its specifications include a 5:1 reduction magnification, variable NA of 0.4 ~ 0.6, resolution of < 0.25 µm, image field size of 22mm ~ 17 X 26 mm, light source wavelength of 248 nm with pulse frequency of 1 kHz and power of 10 W, reticle size of 6", wafer size of max Ø8", off-axis broad-band auto alignment, stage repeatability of < 35 nm, and dimensions of W1900 X D2600 X H2450 mm for the stepper main body.

FPA-3000EX4

The Canon FPA-3000EX5 is a high throughput excimer-laser stepper designed for critical layer mass production of 64Mb and 256Mb DRAMs and next-generation microprocessors. It offers a 23% higher throughput than its predecessor, the EX4, with a throughput of more than 90 wafers per hour. It has the industry’s best optical performance and maintains compatibility with existing Canon 5x i-line step-and-repeat tools. The EX5 has a newly designed projection lens with a numerical aperture (NA) of 0.63 and 0.22µm resolution in an exposure area of 22mm x 22mm. It also has an on-the-fly focusing system, an improved advanced global alignment (AGA) scheme, and a high-output Cymer 5000 series excimer laser source. The FPA-3000EX5 stepper shares many of the same technology innovations as other models in Canon’s i-line stepper family, making it an efficient mix-and-match partner with existing critical-layer and rough-layer steppers.

FPA-3000EX5

The Canon Stepper FPA-3000 EX3 is a photolithography tool used in semiconductor manufacturing. It has a 6" square quartz reticle and can handle 4” to 8” wafers. The projection optics have a 1/5X magnification and a numerical aperture of .40-.60. The exposure light is KrF (248nm). The illumination system uses a KrF Cymer/ELS4300 light source with an output of 7.2W. The printing performance has a resolution of <0.25μm and depth of focus of >.70μm. The alignment system has reticle rotation accuracy of <±0.01μm on wafer and wafer alignment of <0.055μm mean + 3sigma. The focus/leveling system has focus repeatability of <0.10μm (3sigma). The stage has step accuracy of <0.04μm (3sigma). The throughput is >73 wafers/hour for Φ6", 22mm, 32 shots and >53 wafers/hour for Φ8", 22mm, 60 shots.

FPA-3000EX3

FPA-3030EX4

FPA-3000GMR 

FPA-3030EX3

FPA-3030EX5

By changing the projection lens magnification (4:1 → 3.125:1), FPA-6300ESW scanners realize a wider exposure field with the reticle size remaining at 6 inches.

FPA-6300ESW

FPA-6000ES5a

The FPA-3000EX6 features the first stepper lens that is specifically designed for use with Canon's new IDEAL resolution enhancement technique. IDEAL multilevel imaging is Canon's new method for achieving a process k1 factor of 0.3 with ordinary optical lithography tools. Using IDEAL, the EX6 can image circuit features below 120nm with good process latitude. While IDEAL enables optical lithography to resolve circuit patterns smaller than one-half the wavelength of the illumination light, it also requires a lens with an extremely low wavefront aberration.

FPA-3000EX6

The performance of previous model FPA-3000EX6 steppers was inherited, and the highest-level of resolution (150 nm), overlay accuracy (25 nm) and productivity (throughput *121 wph) were achieved among KrF excimer laser steppers in the same class.
*200 mm (8 inch) wafer, 60 shots

CANON

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热门 CANON 248nm DUV

FPA-6000ES6a

FPA-6000ES5

FPA-6000ES6

FPA-3000EX4

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全部 CANON 248nm DUV