概述

NT333™ has large wafer capacity as compared to single or dual wafer processing techniques. With the added capability of pre or post treatment steps included in each ALD cycle, NT333™ is capable of forming films of the highest quality while operating at low temperatures and providing tunable film stresses for a variety of applications. Additionally, NT333™ has unique plasma shield which mitigates plasma damage resulting in high quality films while maintain high stage rotation speeds.