概述

The Maxus is available on both the Concept One and Concept Two platform. The Maxus enhanced the nitride deposition rate while retaining superior nitride film performance. It also enhances the gap fill capability ofTEOS films by enabling fluorinated-TEOS (F-TEOS) processing for .35 micron gap fill. F-TEOS enables the customer to lower the dielectric constant to 3.7, an important capability in enhancing device performance.