概述

The ALTUS Max E is part of the ALTUS product family from Lam Research. It combines Chemical Vapor Deposition (CVD) and Atomic Layer Deposition (ALD) technologies to deposit highly conformal films for advanced tungsten metallization applications. This is important for semiconductor manufacturers as they move to smaller technology nodes and face significant scaling and integration challenges. The ALTUS Max E is designed to address these challenges by enabling complete, defect-free tungsten fill, while reducing resistivity of the bulk tungsten. It also offers high step coverage with reduced thickness films by using ALD in the deposition of WN films. Some key applications of the ALTUS Max E include tungsten plug and via fill, 3D NAND wordlines, low-stress composite interconnects, and WN barrier for via and contact metallization.