TEL / TOKYO ELECTRON

TRIAS TI/TIN

The TEL (Tokyo Electron) Trias SPA is a single-wafer plasma processing system designed for semiconductor manufacturing. It utilizes Tokyo Electron's Slot Plane Antenna (SPA) technology to generate high-density, low-electron-temperature plasma, enabling low-damage, low-temperature plasma treatments. This system is particularly suited for critical front-end-of-line (FEOL) applications, including gate nitridation, gate recovery oxidation, and shallow trench isolation (STI) liner oxidation.

TRIAS SPA

The Triase+™ EX-II™ TiN (Titanium Nitride) is an advanced 300mm single wafer deposition system for high speed ASFD which enables high-quality thin film formation with excellent within-wafer uniformity and high step coverage characteristics. Featuring an optimized reactor design with new gas injection module, the system achieves high productivity even in the leading-edge semiconductor device manufacturing, and is used for various applications including formation of contact barriers, capacitor electrodes, word line barriers and metal gates.

TRIASe+ EX-II TiN

Triase+™ Ti/TiN is a 300mm single-wafer metal CVD system for high step coverage Ti/TiN film formation using TiCl4.

TRIASe+ Ti/TiN

Trias High-k CVD system is a 300mm single-wafer cluster tool designed to produce thin-film materials required for the advanced gate stack, which will be incorporated in the most advanced semiconductor devices at the 45nm node and beyond.

TRIAS HIGH-k

TRIASE+ EX-II TI/TIN

The Triase+™ SPAi system inherits its predecessors’ reliability, to equally enhance system throughput, achieve higher productivity, lower power consumption (which reduces CO2 emissions), and a smaller footprint. An integrated bias function helps to produce high quality film while maintaining excellent coverage, and making the system suitable for critical FEOL applications including gate nitridation, gate recovery oxidation, STI liner oxidation, and high-k nitridation.

TEL / TOKYO ELECTRON

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TRIAS TI/TIN

TRIAS SPA

TRIASe+ EX-II TiN

TRIASe+ Ti/TiN

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全部 TEL / TOKYO ELECTRON Deposition