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MICHELAN C3
概述
Poly etcher. Process performance: Specialized for critical etch process (DRAM, V-NAND and Logic). Fast etch / various control knobs for uniform etch rate. High mask selectivity / high accuracy of CD control. Low Particle / Vertical Etching. Productivity / Hardware: Cluster and quadra type transfer module : Max. 6 chambers. ICP type etcher : high plasma density. Exclusive ICP Source Antenna. RF sync pulse function : high aspect ratio. Multi-zone ESC heating and 3Z-tunable gas radial uniformity control. Low cost and extended MTBC.
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