概述

The TCP 9400DSiE II is part of the TCP 9400DSiE product family, which is based on the production-proven TCP 9400 silicon etch series. The system features a patented high-density TCP plasma source that provides a configuration to meet the challenges of silicon deep reactive ion etch. This offers broad process capability and flexibility for a wide range of applications, including MEMS, advanced packaging, power semiconductors, and TSV applications on 150 mm and 200 mm wafers. Additionally, the system incorporates proprietary in situ chamber cleaning technology to provide etch rate stability.