概述

The centrotherm c.OXIDATOR high-temperature oxidation furnace has been developed for the special needs of SiC oxidation but can also be used for silicon oxidation. The high-volume furnace is available in two versions allowing wafer sizes up to 200 mm. Optionally c.OXIDATOR supports in-situ wet oxidation as well as H2 and NH3 annealing applications. Temperatures up to 1500 °C and all other supported features open up a wide range of possibilities to SiC oxidation and the development of an oxide layer with low interface trap density (Dit) and high channel mobility.