Introducing the EXCEED2300AH Ion Implanter - a cutting-edge solution revolutionizing ion implantation. With up to 250kV accelerating voltage, it ensures precise and efficient tasks, removing energy contamination for accurate results. Experience uniformity and beam parallelism with upgraded predictive checking. Rapidly scan up to 300 sheets/hr with high precision. Compatible with 200mm and 300mm wafers for versatile production and research needs.

NISSIN	

EXCEED 2300AH

EXCEED 3000AH-8T
EXCEED 3000AH-12T

EXCEED 3000 is a proven customer recognized reliable and highly productive implanter.  The EXCEED platform is known for its low cost of ownership and ease of maintenance. The EXCEED 3000-AH is also capable of running thin and Ultra-thin wafers.

EXCEED 3000AH

The 300 XP evolved from the industry-standard Varian 350D medium current implanter, which was the tool of choice during the early 1980's. The 300 XP was introduced in 1986 with process recipe control that assured error-free setups, independent dual end stations with increased reliability and throughput, and improved dosimetry.

November 10, 2011 – Applied Materials, Inc. announced the successful completion of its acquisition of Varian Semiconductor Equipment Associates, Inc. 
Varian is the leading supplier of ion implantation equipment used by chip makers and has been applying this technology to crystalline silicon wafers for photovoltaic panels. Varian will operate as a business unit of Applied's Silicon Systems Group.

APPLIED MATERIALS (AMAT) / VARIAN

300XP

The VIISta PLAD is a multi-chamber tool built on a platform common with Varian Semiconductor’s VIISta family of implanters, the only truly complete platform available that covers all implant segments. The VIISta PLAD implants the entire wafer simultaneously by positioning the wafer directly in a chamber containing plasma of the desired species. A pulsed DC voltage applied to the wafer draws ions from the plasma at a precisely controlled energy, resulting in extremely fast high-dose implants. Pulsing the bias voltage allows the system to automatically neutralize any charge buildup on the wafer surface between pulses and measure the ion dose per pulse using a Faraday for closed-loop in-situ dose control. With throughput up to six times greater than beamline or modified-source beamline technologies, the VIISta PLAD has become an attractive solution for critical low-energy, high-dose applications, such as DRAM (dynamic random access memory) polysilicon gate doping.

Ion Implantation

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Ion Implantation 的制造商

Ion Implantation 的热门产品

EXCEED 2300AH

EXCEED 3000AH

300XP

VIISta PLAD