概述

The system shown above is equipped with a RF 22cm gridded ion source positioned for uniform milling of a 150mm Ø substrate. System features a 2000 l/s turbopump, computer control, SIMS end point detection, (2) sputtering sources for depositing passivation layers, and substrate holder with motorized tilting, rotation, and water cooling. Etch rate is 320 Å/min of SiO2 with +/- 2% uniformity.