说明
Lithography Lithography Machine配置
无配置OEM 型号描述
The Canon MPA-600 FA is a one-to-one projection aligner for 6" wafers. It uses a high intensity Mercury lamp to expose the wafer through a mask plate and a series of mirrors. The wafer scans horizontally through an arc of light at a specified scan speed to expose the light-sensitive positive photoresist that was coated onto the wafer. The Canon MPA-600 FA has a wafer size of 5 or 6 inches and a mask size of 6 or 7 inches square. It uses a projection mirror with a magnification of 1X and an illuminator that is a 2kW super high pressure mercury lamp. The exposure wavelengths used are 365 nm (i-line), 405 nm (h-line), and 436 nm (g-line). The resolution is 2.5 um over the entire 6 inch surface and the depth of focus is more than +/- 6 um at linewidth 1.5 um. The alignment accuracy is 3 sigma, < or = 0.6 um.文件
无文件
CANON
MPA 600
已验证
类别
Mask/Bond Aligners
上次验证: 14 天前
物品主要详细信息
状况:
Used
运行状况:
未知
产品编号:
115646
晶圆尺寸:
未知
年份:
未知
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
类似上架物品
查看全部CANON
MPA 600
类别
Mask/Bond Aligners
上次验证: 14 天前
物品主要详细信息
状况:
Used
运行状况:
未知
产品编号:
115646
晶圆尺寸:
未知
年份:
未知
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
说明
Lithography Lithography Machine配置
无配置OEM 型号描述
The Canon MPA-600 FA is a one-to-one projection aligner for 6" wafers. It uses a high intensity Mercury lamp to expose the wafer through a mask plate and a series of mirrors. The wafer scans horizontally through an arc of light at a specified scan speed to expose the light-sensitive positive photoresist that was coated onto the wafer. The Canon MPA-600 FA has a wafer size of 5 or 6 inches and a mask size of 6 or 7 inches square. It uses a projection mirror with a magnification of 1X and an illuminator that is a 2kW super high pressure mercury lamp. The exposure wavelengths used are 365 nm (i-line), 405 nm (h-line), and 436 nm (g-line). The resolution is 2.5 um over the entire 6 inch surface and the depth of focus is more than +/- 6 um at linewidth 1.5 um. The alignment accuracy is 3 sigma, < or = 0.6 um.文件
无文件