AIX G5+ C
类别
MOCVD概述
AIX G5+ C Planetary Reactor for GaN on 150/200 mm Si GaN on Si HEMT thickness uniformity 0.44 % standard deviation without edge exclusion. Mean thickness 3.37 µm.
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AIX G5+ C Planetary Reactor for GaN on 150/200 mm Si GaN on Si HEMT thickness uniformity 0.44 % standard deviation without edge exclusion. Mean thickness 3.37 µm.
0
检验、保险、评估、物流