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APPLIED MATERIALS (AMAT) PRODUCER GT PECVD
    说明
    PECVD (Chemical Vapor Deposition)
    配置
    TEOS
    OEM 型号描述
    Applied Materials offers PECVD (Plasma-Enhanced Chemical Vapor Deposition) TEOS (tetraethyl orthosilicate) and silane-based oxide and nitride films for high-productivity blanket film applications for ≤90nm technology nodes. These films deliver excellent thickness uniformity, low particulates, and repeatable film stress which make them ideal solutions for liner and capping layers for passivation, thick pre-metal dielectric (PMD) capacitor layer, and inter-metal dielectric (IMD) applications. For 130nm and 90nm copper dual damascene schemes, the Producer PECVD system offers production-proven TEOS FSG (fluorinated silicate glass) as the low k dielectric (k=3.45) and Damascene Nitride as the etch-stop and copper barrier layer. Damascene Nitride provides a unique in-situ copper removal step to ensure excellent adhesion and improved device reliability. High etch selectivity to FSG and low hydrogen content make this film ideal as an etch-stop layer. The TEOS FSG film, which is deposited on top of Damascene Nitride, provides significantly higher device reliability and performance compared to silane-based FSG films due to its inherent fluorine stability and moisture resistance. The 3.45 k-value reduces capacitance versus USG (undoped silicate glass) and silane FSG films, thereby increasing device speed and lowering power consumption for devices. These PECVD processes run on the production-proven, high-throughput Applied Producer platform. With its innovative Twin Chamber architecture, the Producer platform enables simultaneous processing of up to six wafers for superior productivity and significant reduction in cost of ownership with high system reliability. Platform extendibility enables customers to leverage the Producer toolset for multiple process nodes.
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    APPLIED MATERIALS (AMAT)

    PRODUCER GT PECVD

    verified-listing-icon

    已验证

    类别
    PECVD

    上次验证: 21 天前

    物品主要详细信息

    状况:

    Used


    运行状况:

    未知


    产品编号:

    62611


    晶圆尺寸:

    12"/300mm


    年份:

    未知


    Have Additional Questions?
    Logistics Support
    Available
    Money Back Guarantee
    Available
    Transaction Insured by Moov
    Available
    Refurbishment Services
    Available
    类似上架物品
    查看全部
    APPLIED MATERIALS (AMAT) PRODUCER GT PECVD

    APPLIED MATERIALS (AMAT)

    PRODUCER GT PECVD

    PECVD
    年份: 2009状况: 二手
    上次验证60 多天前

    APPLIED MATERIALS (AMAT)

    PRODUCER GT PECVD

    verified-listing-icon
    已验证
    类别
    PECVD
    上次验证: 21 天前
    listing-photo-50e2b540266b4a9db7bd8997cfe6da8b-https://d2pkkbyngq3xpw.cloudfront.net/moov_media/3.0-assets/photo-coming-soon-small.png
    物品主要详细信息

    状况:

    Used


    运行状况:

    未知


    产品编号:

    62611


    晶圆尺寸:

    12"/300mm


    年份:

    未知


    Have Additional Questions?
    Logistics Support
    Available
    Money Back Guarantee
    Available
    Transaction Insured by Moov
    Available
    Refurbishment Services
    Available
    说明
    PECVD (Chemical Vapor Deposition)
    配置
    TEOS
    OEM 型号描述
    Applied Materials offers PECVD (Plasma-Enhanced Chemical Vapor Deposition) TEOS (tetraethyl orthosilicate) and silane-based oxide and nitride films for high-productivity blanket film applications for ≤90nm technology nodes. These films deliver excellent thickness uniformity, low particulates, and repeatable film stress which make them ideal solutions for liner and capping layers for passivation, thick pre-metal dielectric (PMD) capacitor layer, and inter-metal dielectric (IMD) applications. For 130nm and 90nm copper dual damascene schemes, the Producer PECVD system offers production-proven TEOS FSG (fluorinated silicate glass) as the low k dielectric (k=3.45) and Damascene Nitride as the etch-stop and copper barrier layer. Damascene Nitride provides a unique in-situ copper removal step to ensure excellent adhesion and improved device reliability. High etch selectivity to FSG and low hydrogen content make this film ideal as an etch-stop layer. The TEOS FSG film, which is deposited on top of Damascene Nitride, provides significantly higher device reliability and performance compared to silane-based FSG films due to its inherent fluorine stability and moisture resistance. The 3.45 k-value reduces capacitance versus USG (undoped silicate glass) and silane FSG films, thereby increasing device speed and lowering power consumption for devices. These PECVD processes run on the production-proven, high-throughput Applied Producer platform. With its innovative Twin Chamber architecture, the Producer platform enables simultaneous processing of up to six wafers for superior productivity and significant reduction in cost of ownership with high system reliability. Platform extendibility enables customers to leverage the Producer toolset for multiple process nodes.
    文件

    无文件

    类似上架物品
    查看全部
    APPLIED MATERIALS (AMAT) PRODUCER GT PECVD

    APPLIED MATERIALS (AMAT)

    PRODUCER GT PECVD

    PECVD年份: 2009状况: 二手上次验证:60 多天前
    APPLIED MATERIALS (AMAT) PRODUCER GT PECVD

    APPLIED MATERIALS (AMAT)

    PRODUCER GT PECVD

    PECVD年份: 0状况: 二手上次验证:21 天前
    APPLIED MATERIALS (AMAT) PRODUCER GT PECVD

    APPLIED MATERIALS (AMAT)

    PRODUCER GT PECVD

    PECVD年份: 0状况: 二手上次验证:21 天前