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LAM RESEARCH / NOVELLUS INOVA NExT
  • LAM RESEARCH / NOVELLUS INOVA NExT
  • LAM RESEARCH / NOVELLUS INOVA NExT
  • LAM RESEARCH / NOVELLUS INOVA NExT
说明
TFM_TiN-HM Dep
配置
无配置
OEM 型号描述
The INOVA NExT, a 300mm metallization system designed to deposit highly conformal copper barrier-seed films at 45 nanometers and beyond. On the INOVA NExT, the single target HCM technology has been extended to the 45 nanometer node; the system also features an integrated ion-induced atomic layer deposition (iALD) module to deposit tantalum nitride (TaN) barrier films below 45 nanometers.
文件

无文件

类别
PVD / Sputtering

上次验证: 60 多天前

物品主要详细信息

状况:

Used


运行状况:

未知


产品编号:

113009


晶圆尺寸:

12"/300mm


年份:

2013


Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available

LAM RESEARCH / NOVELLUS

INOVA NExT

verified-listing-icon
已验证
类别
PVD / Sputtering
上次验证: 60 多天前
listing-photo-e3e7f29b0d1d4b45abb60123fac49f6d-https://d2pkkbyngq3xpw.cloudfront.net/moov_media/3.0-assets/photo-coming-soon-small.png
物品主要详细信息

状况:

Used


运行状况:

未知


产品编号:

113009


晶圆尺寸:

12"/300mm


年份:

2013


Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
说明
TFM_TiN-HM Dep
配置
无配置
OEM 型号描述
The INOVA NExT, a 300mm metallization system designed to deposit highly conformal copper barrier-seed films at 45 nanometers and beyond. On the INOVA NExT, the single target HCM technology has been extended to the 45 nanometer node; the system also features an integrated ion-induced atomic layer deposition (iALD) module to deposit tantalum nitride (TaN) barrier films below 45 nanometers.
文件

无文件