说明
无说明配置
无配置OEM 型号描述
The FPA-3000EX4 is a Fine Pattern Aligner that uses a 1KHz KrF laser to create quarter micron images on silicon wafers. It has an illumination intensity of 2800 W/m2 and can process 73 wafers per hour. It features a new color touch-panel display, All-Axis Air Bearing FLAT Stage performance, and CQUEST II off-axis illumination capabilities. The EX4 is equipped with a Cymer 1 KHz KrF laser and can expose subquarter micron images while maintaining 35 nm stage stepping accuracy. It also has a variable numerical aperture (NA) and Canon’s ULTIMA lens manufacturing technique to limit distortions. The FPA-3000EX4 offers lithography solutions such as improved resist profiles and depth-of-focus, fast and accurate air bearing FLAT stage performance, low distortion and tight overlay alignment, repeatable alignment accuracy for Chemical Mechanical Polish (CMP) Wafers, and improved chip yields and focus reliability with its edge-shot optimized tilt focusing system (CCD-OPTF II). Its specifications include a 5:1 reduction magnification, variable NA of 0.4 ~ 0.6, resolution of < 0.25 µm, image field size of 22mm ~ 17 X 26 mm, light source wavelength of 248 nm with pulse frequency of 1 kHz and power of 10 W, reticle size of 6", wafer size of max Ø8", off-axis broad-band auto alignment, stage repeatability of < 35 nm, and dimensions of W1900 X D2600 X H2450 mm for the stepper main body.文件
无文件
CANON
FPA-3000EX4
已验证
类别
Steppers & Scanners
上次验证： 60 多天前
物品主要详细信息
状况：
Used
运行状况:
未知
产品编号：
83595
晶圆尺寸：
8"/200mm
年份：
1998
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
CANON
FPA-3000EX4
类别
Steppers & Scanners
上次验证： 60 多天前
物品主要详细信息
状况：
Used
运行状况:
未知
产品编号：
83595
晶圆尺寸：
8"/200mm
年份：
1998
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
说明
无说明配置
无配置OEM 型号描述
The FPA-3000EX4 is a Fine Pattern Aligner that uses a 1KHz KrF laser to create quarter micron images on silicon wafers. It has an illumination intensity of 2800 W/m2 and can process 73 wafers per hour. It features a new color touch-panel display, All-Axis Air Bearing FLAT Stage performance, and CQUEST II off-axis illumination capabilities. The EX4 is equipped with a Cymer 1 KHz KrF laser and can expose subquarter micron images while maintaining 35 nm stage stepping accuracy. It also has a variable numerical aperture (NA) and Canon’s ULTIMA lens manufacturing technique to limit distortions. The FPA-3000EX4 offers lithography solutions such as improved resist profiles and depth-of-focus, fast and accurate air bearing FLAT stage performance, low distortion and tight overlay alignment, repeatable alignment accuracy for Chemical Mechanical Polish (CMP) Wafers, and improved chip yields and focus reliability with its edge-shot optimized tilt focusing system (CCD-OPTF II). Its specifications include a 5:1 reduction magnification, variable NA of 0.4 ~ 0.6, resolution of < 0.25 µm, image field size of 22mm ~ 17 X 26 mm, light source wavelength of 248 nm with pulse frequency of 1 kHz and power of 10 W, reticle size of 6", wafer size of max Ø8", off-axis broad-band auto alignment, stage repeatability of < 35 nm, and dimensions of W1900 X D2600 X H2450 mm for the stepper main body.文件
无文件