STR1
概述
150/200mm bridge tool for Si, SiC, GaN, GaAs (on sapphire, SiC or Si), Ge and epitaxy processes includes 2D stress option. Automatic, non-contact measurement of filmed, patterned and bare wafers, 150mm & 200mm diameter. The MicroSense STR1 measurement system provides full wafer, high speed geometry measurements of semiconductor wafers using non-contact capacitance sensors with nanometer level thickness resolution. The system measures the thickness, flatness, bow and warp of the wafer in compliance with SEMI standards. MicroSense StressMap software provides accurate measurement of wafer stress based on high resolution wafer pre-and post deposition shape data. Over 120,000 data points are measured on each wafer to generate high resolution wafer maps.
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