说明
无说明配置
HfO2 deposition: − Temperature: 320 ºC − Pressure: 0.5 Torr − Precursor: TEMAH (Tetrakisethymethyllaminohafnium) − Precursor carrier gas: Ar − Process purge gas: Ar − HfO2 reaction: TEMAH half-reaction + O3 half-reaction Al2O3 deposition: − Temperature: 250 ºC − Pressure: 0.5 Torr − Precursor: TMA (Trimethylaluminum) − Precursor carrier gas: Ar − Process purge gas: Ar − Al2O3 reaction: TMA half-reaction + O3 half-reaction TiN deposition: − Temperature: 470 ºC − Pressure: 0.8 Torr − Precursor: TiCl4 (Titanium tetrachloride) − Precursor carrier gas: Ar − Process purge gas: Ar − TiN reaction: TiCl4 half-reaction + NH3 half-reactionOEM 型号描述
未提供文件
无文件
AIXTRON / GENUS
StrataGem 200
已验证
类别
ALD
上次验证： 60 多天前
物品主要详细信息
状况：
Used
运行状况:
Installed / Running
产品编号：
104535
晶圆尺寸：
8"/200mm
年份：
2010
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
AIXTRON / GENUS
StrataGem 200
类别
ALD
上次验证： 60 多天前
物品主要详细信息
状况：
Used
运行状况:
Installed / Running
产品编号：
104535
晶圆尺寸：
8"/200mm
年份：
2010
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
说明
无说明配置
HfO2 deposition: − Temperature: 320 ºC − Pressure: 0.5 Torr − Precursor: TEMAH (Tetrakisethymethyllaminohafnium) − Precursor carrier gas: Ar − Process purge gas: Ar − HfO2 reaction: TEMAH half-reaction + O3 half-reaction Al2O3 deposition: − Temperature: 250 ºC − Pressure: 0.5 Torr − Precursor: TMA (Trimethylaluminum) − Precursor carrier gas: Ar − Process purge gas: Ar − Al2O3 reaction: TMA half-reaction + O3 half-reaction TiN deposition: − Temperature: 470 ºC − Pressure: 0.8 Torr − Precursor: TiCl4 (Titanium tetrachloride) − Precursor carrier gas: Ar − Process purge gas: Ar − TiN reaction: TiCl4 half-reaction + NH3 half-reactionOEM 型号描述
未提供文件
无文件