说明
P-5000 Mark II DLH SACVD配置
CVD WxZ Tungsten SACVD (Chemical Vapor Deposition) Deposition Equipment Software: b6.02 MF: P5000 Mark II Qty 4 - DLH SACVD: TEOS Deposition Chuck: Anodized Aluminum Ozonators (4 Astex) with In usa ozone monitor. Shumacher TEOS cabinet MFCs: 28 Horiba Z500 Digital MFCs Robot: ROBOT ASSY 8 IN AMAT 5000 Dry Pumps: EDWARDS iqdp80/qmb250 STACK Qty 4. Edwards IQDP80 Qty 1 Chillers: AMAT Heatex 1, Neslab HX300 Upgrades: PLIS,Brooks Digital Baratron Qty 8, V440 SBCOEM 型号描述
The Applied Materials Precision 5000 CVD is a single system solution for depositing high-quality, low-temperature dielectric materials on semiconductor devices. It incorporates multi-step processes to provide enabling technology for void-free intermetal dielectric deposition with profile control. The system’s process flexibility over a wide range of applications reduces the number and types of machines required for CVD. This makes it an efficient and cost-effective solution for semiconductor manufacturing.文件
无文件
类别
CVD
上次验证： 60 多天前
物品主要详细信息
状况：
Used
运行状况:
未知
产品编号：
125404
晶圆尺寸：
6"/150mm, 8"/200mm
年份：
1995
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
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APPLIED MATERIALS (AMAT)
P5000 CVD
类别
CVD
上次验证： 60 多天前
物品主要详细信息
状况：
Used
运行状况:
未知
产品编号：
125404
晶圆尺寸：
6"/150mm, 8"/200mm
年份：
1995
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
说明
P-5000 Mark II DLH SACVD配置
CVD WxZ Tungsten SACVD (Chemical Vapor Deposition) Deposition Equipment Software: b6.02 MF: P5000 Mark II Qty 4 - DLH SACVD: TEOS Deposition Chuck: Anodized Aluminum Ozonators (4 Astex) with In usa ozone monitor. Shumacher TEOS cabinet MFCs: 28 Horiba Z500 Digital MFCs Robot: ROBOT ASSY 8 IN AMAT 5000 Dry Pumps: EDWARDS iqdp80/qmb250 STACK Qty 4. Edwards IQDP80 Qty 1 Chillers: AMAT Heatex 1, Neslab HX300 Upgrades: PLIS,Brooks Digital Baratron Qty 8, V440 SBCOEM 型号描述
The Applied Materials Precision 5000 CVD is a single system solution for depositing high-quality, low-temperature dielectric materials on semiconductor devices. It incorporates multi-step processes to provide enabling technology for void-free intermetal dielectric deposition with profile control. The system’s process flexibility over a wide range of applications reduces the number and types of machines required for CVD. This makes it an efficient and cost-effective solution for semiconductor manufacturing.文件
无文件