
说明
无说明配置
Process: TEOS Wafer size: Set up for 6” (double wide). Can do 4”, 5” (double wide), also 8” after carrier modification TEOS process: TEOS, TMPi, TMB MB Wafer cassette slots: 25 slots, 2 load- and 2 unload stations and overflow Temperature / Belt speed range: Up to 550 °C / 0~8 inch / minOEM 型号描述
The WJ-999 is a product from Watkins Johnson. It is an Atmospheric Pressure CVD with 3 process chambers for TEOS and hydride processes. It is used for depositing doped or undoped silicon dioxide (SiO2) films, created from either the TEOS/Ozone or Silane/Oxygen CVD reaction.文件
无文件
类别
CVD
上次验证: 60 多天前
物品主要详细信息
状况:
Used
运行状况:
未知
产品编号:
122830
晶圆尺寸:
4"/100mm, 5"/125mm, 6"/150mm, 8"/200mm
年份:
未知
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
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WJ-999
类别
CVD
上次验证: 60 多天前
物品主要详细信息
状况:
Used
运行状况:
未知
产品编号:
122830
晶圆尺寸:
4"/100mm, 5"/125mm, 6"/150mm, 8"/200mm
年份:
未知
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
说明
无说明配置
Process: TEOS Wafer size: Set up for 6” (double wide). Can do 4”, 5” (double wide), also 8” after carrier modification TEOS process: TEOS, TMPi, TMB MB Wafer cassette slots: 25 slots, 2 load- and 2 unload stations and overflow Temperature / Belt speed range: Up to 550 °C / 0~8 inch / minOEM 型号描述
The WJ-999 is a product from Watkins Johnson. It is an Atmospheric Pressure CVD with 3 process chambers for TEOS and hydride processes. It is used for depositing doped or undoped silicon dioxide (SiO2) films, created from either the TEOS/Ozone or Silane/Oxygen CVD reaction.文件
无文件