说明
WCVD (Chemical Vapor Deposition)配置
无配置OEM 型号描述
ALTUS Max ICEFill is a product from Lam’s ALTUS family of systems that combines Chemical Vapor Deposition (CVD) and Atomic Layer Deposition (ALD) technologies to deposit highly conformal films for advanced tungsten metallization applications. It addresses industry challenges such as minimizing contact resistance and enabling complete, defect-free tungsten fill for nanoscale structures. The product offers benefits such as lower overall resistivity of thin W films, low-fluorine and low-stress W fill for advanced 3D NAND and DRAM, and high step coverage with reduced thickness films by using ALD in the deposition of WN films. It is used for key applications such as tungsten plug and via fill, 3D NAND wordlines, low-stress composite interconnects, and WN barrier for via and contact metallization.文件
无文件
类别
CVD
上次验证： 30 多天前
物品主要详细信息
状况：
Used
运行状况:
未知
产品编号：
135702
晶圆尺寸：
12"/300mm
年份：
未知
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
LAM RESEARCH / NOVELLUS
ALTUS MAX ICEFill
类别
CVD
上次验证： 30 多天前
物品主要详细信息
状况：
Used
运行状况:
未知
产品编号：
135702
晶圆尺寸：
12"/300mm
年份：
未知
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
说明
WCVD (Chemical Vapor Deposition)配置
无配置OEM 型号描述
ALTUS Max ICEFill is a product from Lam’s ALTUS family of systems that combines Chemical Vapor Deposition (CVD) and Atomic Layer Deposition (ALD) technologies to deposit highly conformal films for advanced tungsten metallization applications. It addresses industry challenges such as minimizing contact resistance and enabling complete, defect-free tungsten fill for nanoscale structures. The product offers benefits such as lower overall resistivity of thin W films, low-fluorine and low-stress W fill for advanced 3D NAND and DRAM, and high step coverage with reduced thickness films by using ALD in the deposition of WN films. It is used for key applications such as tungsten plug and via fill, 3D NAND wordlines, low-stress composite interconnects, and WN barrier for via and contact metallization.文件
无文件