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LAM RESEARCH / NOVELLUS CONCEPT THREE "C3" ALTUS
    说明
    WCVD(2 chamber)
    配置
    无配置
    OEM 型号描述
    Concept Three ALTUS is a 300mm process module that delivers leading productivity and technology for contact and local interconnect applications. It uses Pulsed Nucleation Layer (PNL™) technology to integrate a high throughput nucleation layer with chemical vapor deposition (CVD bulk deposition). The Multi-Station Sequential Deposition (MSSD) architecture enables the nucleation layer and CVD fill to be performed within the same ALTUS chamber. This results in highly conformal tungsten films with improved film properties, benchmark productivity, and superior production availability. The integrated PNL and CVD approach produces the lowest Cost of Ownership tungsten deposition solution in the industry.
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    PREFERRED
     
    SELLER
    类别
    CVD

    上次验证: 60 多天前

    Buyer pays 12% premium of final sale price
    物品主要详细信息

    状况:

    Used


    运行状况:

    未知


    产品编号:

    118497


    晶圆尺寸:

    未知


    年份:

    未知


    Logistics Support
    Available
    Transaction Insured by Moov
    Available
    Refurbishment Services
    Available
    PREFERRED
     
    SELLER

    LAM RESEARCH / NOVELLUS

    CONCEPT THREE "C3" ALTUS

    verified-listing-icon
    已验证
    类别
    CVD
    上次验证: 60 多天前
    listing-photo-3d270ee88cb64b00922388f3dab1256a-https://d2pkkbyngq3xpw.cloudfront.net/moov_media/3.0-assets/photo-coming-soon-small.png
    Buyer pays 12% premium of final sale price
    物品主要详细信息

    状况:

    Used


    运行状况:

    未知


    产品编号:

    118497


    晶圆尺寸:

    未知


    年份:

    未知


    Logistics Support
    Available
    Transaction Insured by Moov
    Available
    Refurbishment Services
    Available
    说明
    WCVD(2 chamber)
    配置
    无配置
    OEM 型号描述
    Concept Three ALTUS is a 300mm process module that delivers leading productivity and technology for contact and local interconnect applications. It uses Pulsed Nucleation Layer (PNL™) technology to integrate a high throughput nucleation layer with chemical vapor deposition (CVD bulk deposition). The Multi-Station Sequential Deposition (MSSD) architecture enables the nucleation layer and CVD fill to be performed within the same ALTUS chamber. This results in highly conformal tungsten films with improved film properties, benchmark productivity, and superior production availability. The integrated PNL and CVD approach produces the lowest Cost of Ownership tungsten deposition solution in the industry.
    文件

    无文件

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