TEL / TOKYO ELECTRON

TRIAS

Chemical vapor deposition (CVD) system designed for tungsten (W) and tungsten silicide (WSi) processes on 200-mm wafers. It features two process chambers and is optimized for electrode and wiring manufacturing. The system employs a ramp heating method, allowing it to accommodate products requiring different temperature zones, making it suitable for low-volume, multi-product manufacturing. Additionally, it utilizes plasma-free dry cleaning with chlorine trifluoride (ClF₃), which extends wet cleaning cycles and reduces running costs.

MB2-730 HT-HT

MB2-730-Wsi

The Triase+™ EX-II™ TiON (Titanium OxyNitride) provides low leakage current TiON film deposition with can be used in MIM capacitor electrode formation.

TRIASe+ EX-II TiON

TRIAS W

Triase+™ W is a 300mm single-wafer CVD system that delivers high step coverage tungsten (W) film deposition using WF6. By combining rapid heat up and cool down of wafer temperatures and with plasma-less chamber cleaning technology, the system achieves higher productivity and lower CoO. Utilizing SFD and CVD methods respectively, the Triase+™ W provides in-situ deposition of both nucleation and bulk film. This ensures high step coverage, even with small geometry, contact holes. The system is also capable of depositing low-resistance film to meet further scaling needs, and is suitable for such applications as contact plug formation and via filling.

TRIASe+ W

The Triase+™ EX-II™ TiN Plus HT specializes in high-temperature TiN deposition that is aimed to gain lower contact resistance film with reducing impurity levels.

TRIASe+ EX-II TiN Plus HT

The Triase+™ EX-II™ TiN Plus provides excellent uniformity for conformal metal deposition of TiN on complex structures.

TEL / TOKYO ELECTRON

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TRIAS

MB2-730 HT-HT

MB2-730-Wsi

TRIASe+ EX-II TiON

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