概述

Chemical vapor deposition (CVD) system designed for tungsten (W) and tungsten silicide (WSi) processes on 200-mm wafers. It features two process chambers and is optimized for electrode and wiring manufacturing. The system employs a ramp heating method, allowing it to accommodate products requiring different temperature zones, making it suitable for low-volume, multi-product manufacturing. Additionally, it utilizes plasma-free dry cleaning with chlorine trifluoride (ClF₃), which extends wet cleaning cycles and reduces running costs.