说明
Metrology配置
无配置OEM 型号描述
The Applied UVision® 4 wafer Inspection system was introduced in 2010, enabling customers to detect yield-limiting defects in the critical patterning layers of 32nm and below logic and memory devices using DUV laser-based imaging technology. The UVision 4 system’s extendable architecture of high-power polarized deep ultra-violet laser, optimized scattered light collection, and advanced noise reduction capabilities, addresses the inspection challenges of 32nm and below with optical inspection capabilities beyond the resolution limits of conventional brightfield (BF) inspection. Innovative algorithms enable simultaneous detection of systematic mask induced defects (i.e., "haze" defects) and random defects at production worthy throughput made possible by an enhanced image processor. Wide dynamic range detection schemes eliminate the multiple region-specific scans previously required, enabling regions of a chip with differing contrasts to be imaged with optimal sensitivity in a single pass without compromising throughput.文件
无文件
类别
Defect Inspection
上次验证： 60 多天前
物品主要详细信息
状况：
Used
运行状况:
未知
产品编号：
29499
晶圆尺寸：
12"/300mm
年份：
未知
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
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APPLIED MATERIALS (AMAT)
UVISION 4
类别
Defect Inspection
上次验证： 60 多天前
物品主要详细信息
状况：
Used
运行状况:
未知
产品编号：
29499
晶圆尺寸：
12"/300mm
年份：
未知
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
说明
Metrology配置
无配置OEM 型号描述
The Applied UVision® 4 wafer Inspection system was introduced in 2010, enabling customers to detect yield-limiting defects in the critical patterning layers of 32nm and below logic and memory devices using DUV laser-based imaging technology. The UVision 4 system’s extendable architecture of high-power polarized deep ultra-violet laser, optimized scattered light collection, and advanced noise reduction capabilities, addresses the inspection challenges of 32nm and below with optical inspection capabilities beyond the resolution limits of conventional brightfield (BF) inspection. Innovative algorithms enable simultaneous detection of systematic mask induced defects (i.e., "haze" defects) and random defects at production worthy throughput made possible by an enhanced image processor. Wide dynamic range detection schemes eliminate the multiple region-specific scans previously required, enabling regions of a chip with differing contrasts to be imaged with optimal sensitivity in a single pass without compromising throughput.文件
无文件