说明
无说明配置
THROUGHPUT -Measured using AMAT standard wafer and throughput BKMs: On AMAT reference wafer. - Wafer Overhead (In pipeline mode): 90 s - Defect throughput (single wafer): 500 DPH ( Option for 600 DPH ) - Wafer throughput (50 defects/wafer): 8 wafers/hr - Wafer breakage: More then 10000 runs REDETECTION Bare: - Redetection success rate (defects > 0.15 mm): 90% - Redetection Reproducibility: 95% Pattern: - Redetection success rate (defects > 0.15 mm): 90% - Redetection Reproducibility: 95% AUTOMATIC DEFECT CLASSIFICATION - Classification Global Accuracy: 80% - Classification Reproducibility: 90% BARE WAFER REVIEW AND CLASSIFICATION - Throughput for review and ADC: 6 wafer/hour (20 defects/wafer) - Throughput for review and material ID: 160 defs/hr (Typical Acquisition Time): 10s RECIPE PROGRAMMING Time to New ADR Recipe (existing layer, New product): 20 min - Time to New ADC Recipe: 2.0 Hours Defect files type: All SEM - Resolution: 4 nm @ 1 kV (0° tilt) - Accelerating Voltage: 500V – 15kV - Magnification: x500-x200,000 - Multi perspective SEM image: Yes - High Aspect Ratio: N/A - Auto focus: Yes IMAGE STABILITY - Gun Life Time: >1 Year - Gun Bake Out Frequency: 6-12 Months - Prob current monitor system: Yes OPTICAL MICROSCOPE Color - Magnification: X2.5, X20, X100 STAGE - X, Y Coordinates Accuracy (@ 0° tilt): +1.5μm - Tilt (3 Discrete positions): 0°, 15°, 45o Discrete tilting - Tilt Position Exchange Time: 35 s - Tilt Eccentricity: +10 μm - Rotating: 0°, 45°, 90o , 180o Discrete rotating API & VOLTAGE CONTRAST -Voltage Contrast Redetection and ADC: Redetection rate > 90% for filled structure and structures with Aspect Ratio up to 1:3 ADC allows classification of Voltage Contrast according to gray level. -API (Automatic Process Control): +/-1.5umAll relevant ADR and ADC specifications apply to the API application. EDX -Typical Acquisition Time: 10 s - Resolution: Mn 138.4 eV +2.5 - Resolution: Si 91 eV +2.0 - Resolution: F 81.5 eV +2.0 CLEANLINESS - Class 1 clean room compatible - Front Side Wafer: 0.013 PWP/cm² @> 0.12 μm - Back Side Wafer: 0.14 PWP/cm2@> 1 mm IMAGE STORAGE: More then 10,000 - Image format: TIF HANDLING YIELD: 99.99% UPTIME: 0-6 months after acceptance: 93%, 6 months plus: 95% MTBF: 0-6 months after acceptance: 750hr, 6 months plus: 1000hr MTBA: 0-6 months after acceptance: 60hr, 6 months plus: 100hr PM: 3.75 hr/ week MTTR: 6hrOEM 型号描述
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APPLIED MATERIALS (AMAT)
SEMVISION CX 300
已验证
类别
Defect Inspection
上次验证： 30 多天前
物品主要详细信息
状况：
Used
运行状况:
Deinstalled
产品编号：
113459
晶圆尺寸：
未知
年份：
未知
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
APPLIED MATERIALS (AMAT)
SEMVISION CX 300
类别
Defect Inspection
上次验证： 30 多天前
物品主要详细信息
状况：
Used
运行状况:
Deinstalled
产品编号：
113459
晶圆尺寸：
未知
年份：
未知
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
说明
无说明配置
THROUGHPUT -Measured using AMAT standard wafer and throughput BKMs: On AMAT reference wafer. - Wafer Overhead (In pipeline mode): 90 s - Defect throughput (single wafer): 500 DPH ( Option for 600 DPH ) - Wafer throughput (50 defects/wafer): 8 wafers/hr - Wafer breakage: More then 10000 runs REDETECTION Bare: - Redetection success rate (defects > 0.15 mm): 90% - Redetection Reproducibility: 95% Pattern: - Redetection success rate (defects > 0.15 mm): 90% - Redetection Reproducibility: 95% AUTOMATIC DEFECT CLASSIFICATION - Classification Global Accuracy: 80% - Classification Reproducibility: 90% BARE WAFER REVIEW AND CLASSIFICATION - Throughput for review and ADC: 6 wafer/hour (20 defects/wafer) - Throughput for review and material ID: 160 defs/hr (Typical Acquisition Time): 10s RECIPE PROGRAMMING Time to New ADR Recipe (existing layer, New product): 20 min - Time to New ADC Recipe: 2.0 Hours Defect files type: All SEM - Resolution: 4 nm @ 1 kV (0° tilt) - Accelerating Voltage: 500V – 15kV - Magnification: x500-x200,000 - Multi perspective SEM image: Yes - High Aspect Ratio: N/A - Auto focus: Yes IMAGE STABILITY - Gun Life Time: >1 Year - Gun Bake Out Frequency: 6-12 Months - Prob current monitor system: Yes OPTICAL MICROSCOPE Color - Magnification: X2.5, X20, X100 STAGE - X, Y Coordinates Accuracy (@ 0° tilt): +1.5μm - Tilt (3 Discrete positions): 0°, 15°, 45o Discrete tilting - Tilt Position Exchange Time: 35 s - Tilt Eccentricity: +10 μm - Rotating: 0°, 45°, 90o , 180o Discrete rotating API & VOLTAGE CONTRAST -Voltage Contrast Redetection and ADC: Redetection rate > 90% for filled structure and structures with Aspect Ratio up to 1:3 ADC allows classification of Voltage Contrast according to gray level. -API (Automatic Process Control): +/-1.5umAll relevant ADR and ADC specifications apply to the API application. EDX -Typical Acquisition Time: 10 s - Resolution: Mn 138.4 eV +2.5 - Resolution: Si 91 eV +2.0 - Resolution: F 81.5 eV +2.0 CLEANLINESS - Class 1 clean room compatible - Front Side Wafer: 0.013 PWP/cm² @> 0.12 μm - Back Side Wafer: 0.14 PWP/cm2@> 1 mm IMAGE STORAGE: More then 10,000 - Image format: TIF HANDLING YIELD: 99.99% UPTIME: 0-6 months after acceptance: 93%, 6 months plus: 95% MTBF: 0-6 months after acceptance: 750hr, 6 months plus: 1000hr MTBA: 0-6 months after acceptance: 60hr, 6 months plus: 100hr PM: 3.75 hr/ week MTTR: 6hrOEM 型号描述
未提供文件
无文件