说明
无说明配置
无配置OEM 型号描述
Applied UVision® 3 system, the industry’s highest productivity DUV1 Brightfield wafer inspection tool with the critical-defect detection sensitivity required for 45 nanometer (nm) FEOL2 and immersion lithography. Delivering significant advancements to Applied’s breakthrough UVision technology, this next-generation system triples the number of laser beams scanning the wafer to provide 40% faster throughput than any competitive system. Two new imaging modes extend sensitivity to 20nm, and a new flexible automatic defect classification engine enables quick access to defects of interest and faster yield learning. imaging modes in the illumination and collection path which address the contrast versatility required for periphery areas; innovative algorithms of high defect accuracy and stitch-to-stitch detection enable enhanced sensitivity on edge of array and on high-end devices; dual screen configuration with High Resolution Review, which minimizes SEM review time; and new automatic classification capabilities provide quick access to defect-of-interest to reduce yield learning cycle. Additionally, UVision 3’s proprietary ActiveScan technique dynamically compensates for process and color variations within and across wafers.文件
无文件
类别
Defect Inspection
上次验证： 60 多天前
物品主要详细信息
状况：
Used
运行状况:
未知
产品编号：
29600
晶圆尺寸：
未知
年份：
2008
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
APPLIED MATERIALS (AMAT)
UVISION 3
类别
Defect Inspection
上次验证： 60 多天前
物品主要详细信息
状况：
Used
运行状况:
未知
产品编号：
29600
晶圆尺寸：
未知
年份：
2008
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
说明
无说明配置
无配置OEM 型号描述
Applied UVision® 3 system, the industry’s highest productivity DUV1 Brightfield wafer inspection tool with the critical-defect detection sensitivity required for 45 nanometer (nm) FEOL2 and immersion lithography. Delivering significant advancements to Applied’s breakthrough UVision technology, this next-generation system triples the number of laser beams scanning the wafer to provide 40% faster throughput than any competitive system. Two new imaging modes extend sensitivity to 20nm, and a new flexible automatic defect classification engine enables quick access to defects of interest and faster yield learning. imaging modes in the illumination and collection path which address the contrast versatility required for periphery areas; innovative algorithms of high defect accuracy and stitch-to-stitch detection enable enhanced sensitivity on edge of array and on high-end devices; dual screen configuration with High Resolution Review, which minimizes SEM review time; and new automatic classification capabilities provide quick access to defect-of-interest to reduce yield learning cycle. Additionally, UVision 3’s proprietary ActiveScan technique dynamically compensates for process and color variations within and across wafers.文件
无文件