说明
IQC配置
无配置OEM 型号描述
Using deep ultraviolet (DUV) laser-based technology, defects can be detected on patterned wafers (wafers with printed circuit images) as they move between processing steps. Defects include particles, open circuit lines, and shorts between lines. The Applied UVision 6 wafer inspection system detects yield-limiting defects in the critical patterning layers of logic and memory devices. The UVision® 6 system, featuring the same proprietary core technology of deep ultraviolet (DUV) laser illumination, with simultaneous dual channel [brightfield (BF) reflected light and grayfield (GF) scattered light] collection optics. The system further enhances defect inspection capabilities on advanced patterning layers in both FEOL and BEOL applications down to the 1xnm node, addressing such technologies as ArF immersion lithography, double and quad patterning, and extreme ultraviolet layers.文件
无文件
类别
Defect Inspection
上次验证： 60 多天前
物品主要详细信息
状况：
Used
运行状况:
未知
产品编号：
120329
晶圆尺寸：
未知
年份：
未知
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
APPLIED MATERIALS (AMAT)
UVISION 6
类别
Defect Inspection
上次验证： 60 多天前
物品主要详细信息
状况：
Used
运行状况:
未知
产品编号：
120329
晶圆尺寸：
未知
年份：
未知
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
说明
IQC配置
无配置OEM 型号描述
Using deep ultraviolet (DUV) laser-based technology, defects can be detected on patterned wafers (wafers with printed circuit images) as they move between processing steps. Defects include particles, open circuit lines, and shorts between lines. The Applied UVision 6 wafer inspection system detects yield-limiting defects in the critical patterning layers of logic and memory devices. The UVision® 6 system, featuring the same proprietary core technology of deep ultraviolet (DUV) laser illumination, with simultaneous dual channel [brightfield (BF) reflected light and grayfield (GF) scattered light] collection optics. The system further enhances defect inspection capabilities on advanced patterning layers in both FEOL and BEOL applications down to the 1xnm node, addressing such technologies as ArF immersion lithography, double and quad patterning, and extreme ultraviolet layers.文件
无文件