说明
Polysilicon Etch配置
<p>Tool is operating in clean room.</p><p>Labelled as Collateral Asset.</p><p> </p><p>[Chamber A]</p><p>Chamber type:AdvantEdge G2</p><p>Gas config.(sccm)=MFC full scale</p><p>HBR(400）/CL2(50)/CL2(400)/O2(10)/</p><p>O2(100)/HE(400)/N2(200)/SF6(200)/</p><p>CF4(200)/Ar(400)</p><p>Source 13.56MHz, max 3000 W</p><p>Bias 13.56MHz Hz, max 1500 W</p><p>Lid Temp Control ~95℃</p><p>ESC Temp Control ~85℃</p><p> </p><p>[Chamber B]</p><p>Chamber type:AdvantEdge G2</p><p>Gas config.(sccm)=MFC full scale</p><p>HBR(400）/CL2(50)/CL2(400)/O2(10)/</p><p>O2(100)/HE(400)/N2(200)/SF6(200)/</p><p>CF4(200)/Ar(400)</p><p>Source 13.56MHz, max 3000 W</p><p>Bias 13.56MHz Hz, max 1500 W</p><p>Lid Temp Control ~95℃</p><p>ESC Temp Control ~85℃</p><p> </p><p>Pictures will be collected.</p><p>Missing or damaged parts: Not reported.</p>OEM 型号描述
The Centura and Centura AP mainframe single-wafer, multi-chamber architectures enable integrated, sequential wafer processing in up to four process chambers for 150mm, 200mm, and 300mm wafers.文件
无文件
APPLIED MATERIALS (AMAT)
CENTURA AP
已验证
类别
Dry Etch
上次验证： 3 天前
物品主要详细信息
状况：
Used
运行状况:
未知
产品编号：
12712
晶圆尺寸：
12"/300mm
年份：
未知
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
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APPLIED MATERIALS (AMAT)
CENTURA AP
类别
Dry Etch
上次验证： 3 天前
物品主要详细信息
状况：
Used
运行状况:
未知
产品编号：
12712
晶圆尺寸：
12"/300mm
年份：
未知
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
说明
Polysilicon Etch配置
<p>Tool is operating in clean room.</p><p>Labelled as Collateral Asset.</p><p> </p><p>[Chamber A]</p><p>Chamber type:AdvantEdge G2</p><p>Gas config.(sccm)=MFC full scale</p><p>HBR(400）/CL2(50)/CL2(400)/O2(10)/</p><p>O2(100)/HE(400)/N2(200)/SF6(200)/</p><p>CF4(200)/Ar(400)</p><p>Source 13.56MHz, max 3000 W</p><p>Bias 13.56MHz Hz, max 1500 W</p><p>Lid Temp Control ~95℃</p><p>ESC Temp Control ~85℃</p><p> </p><p>[Chamber B]</p><p>Chamber type:AdvantEdge G2</p><p>Gas config.(sccm)=MFC full scale</p><p>HBR(400）/CL2(50)/CL2(400)/O2(10)/</p><p>O2(100)/HE(400)/N2(200)/SF6(200)/</p><p>CF4(200)/Ar(400)</p><p>Source 13.56MHz, max 3000 W</p><p>Bias 13.56MHz Hz, max 1500 W</p><p>Lid Temp Control ~95℃</p><p>ESC Temp Control ~85℃</p><p> </p><p>Pictures will be collected.</p><p>Missing or damaged parts: Not reported.</p>OEM 型号描述
The Centura and Centura AP mainframe single-wafer, multi-chamber architectures enable integrated, sequential wafer processing in up to four process chambers for 150mm, 200mm, and 300mm wafers.文件
无文件