概述

"This single-wafer, multi-chamber machine processes 5”, 6”, or 8” wafers for ≤200mm fabrication. Applications include: epitaxy, etch, CVD, plasma nitridation, and RTP. AMAT’s CENTURA II can accommodate up to 4 process chambers and 2 auxiliary chambers. Configuration includes load lock chambers, wafer handler robot, transfer wafer, process chambers, pneumatic panel, orientation chambergas panel, and cool down chamber. Centura II is compatible with numerous auxiliary chamber types including: Lamp Heated CVD, PE TEOS DxZ, PE Silane DxZ, Gigafill SACVD, Ultima HDP-CVD, Ultima+ HDP-CVD, Ultima tE HDP-CVD, Tungsten WxZ, ALD Tungsten, WxP Tungsten Etch (HeWeb), Tectra Titanium, Tectra Tinitride, ALD Tinitride, Reactive Preclean+, Metal Etch DPS/(+), Poly Etch DPS/(+), Poly Etch Deep Trench (DT), ASP/(+), Oxide Super-E , Oxide eMxP+, Oxide MxP+, Oxide eMax, IPS Dielectric Etch, Poly Etch MxP, Poly Etch MxP+, R2 Metal Etch, Metal Etch MxP, Mark II Etch, Orienter, and various cool down chamber mechanisms."