跳至主要内容
Moov logo

Moov Icon
LAM RESEARCH CORPORATION 2300 EXELAN
    说明
    无说明
    配置
    无配置
    OEM 型号描述
    The 2300 Exelan is a dielectric etch system introduced in November 2000, designed to process both 200mm and 300mm wafers. It combines Dual Frequency Confined™ (DFC™) plasma technology with state-of-the-art chamber design to provide advanced process performance for copper conductive lines creation, latest generation insulating films, and high aspect ratio applications. It features the industry’s largest dielectric etch portfolio and is capable of meeting the challenges of new materials and reduced geometries at the 130nm technology node and below.
    文件

    无文件

    类别
    Dry / Plasma Etch

    上次验证: 60 多天前

    物品主要详细信息

    状况:

    Used


    运行状况:

    未知


    产品编号:

    124340


    晶圆尺寸:

    12"/300mm


    年份:

    未知


    Logistics Support
    Available
    Transaction Insured by Moov
    Available
    Refurbishment Services
    Available

    LAM RESEARCH CORPORATION

    2300 EXELAN

    verified-listing-icon
    已验证
    类别
    Dry / Plasma Etch
    上次验证: 60 多天前
    listing-photo-5dceafd19c6945f9950c6ee390e20f6d-https://d2pkkbyngq3xpw.cloudfront.net/moov_media/3.0-assets/photo-coming-soon-small.png
    物品主要详细信息

    状况:

    Used


    运行状况:

    未知


    产品编号:

    124340


    晶圆尺寸:

    12"/300mm


    年份:

    未知


    Logistics Support
    Available
    Transaction Insured by Moov
    Available
    Refurbishment Services
    Available
    说明
    无说明
    配置
    无配置
    OEM 型号描述
    The 2300 Exelan is a dielectric etch system introduced in November 2000, designed to process both 200mm and 300mm wafers. It combines Dual Frequency Confined™ (DFC™) plasma technology with state-of-the-art chamber design to provide advanced process performance for copper conductive lines creation, latest generation insulating films, and high aspect ratio applications. It features the industry’s largest dielectric etch portfolio and is capable of meeting the challenges of new materials and reduced geometries at the 130nm technology node and below.
    文件

    无文件