说明
无说明配置
无配置OEM 型号描述
Certas LEAGA™ is an environment-friendly, high-throughput gas chemical etch system designed for 300mm wafers that provides surface etch and cleaning without the use of liquids. Its dry processing features watermark-free, unique selectivity performance over various SiO2 films and precise control of interface cleaning. It offers greater flexibility when combined with TEL’s cleaning system. Certas LEAGA™ supports a number of isotropic process requirements for 3D-structure devices with high utilization capability and low cost operation through its plasma-free solution. Up to six dual-wafer processing chambers can be installed on a single platform to satisfy various process requirements. Easily configurable process units enable device scaling and enhanced productivity. Certas LEAGA™ provides highly precise process solutions such as surface pre-cleaning of Si contact formation, oxide film removal and etch back, selective etch in high-aspect 3D structure, and precise recess process, and has been widely adopted by global semiconductor manufacturers from volume manufacturing to next generation development.文件
无文件
类别
Dry / Plasma Etch
上次验证： 昨天
物品主要详细信息
状况：
Used
运行状况:
未知
产品编号：
154424
晶圆尺寸：
12"/300mm
年份：
未知
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
TEL / TOKYO ELECTRON
Certas LEAGA
类别
Dry / Plasma Etch
上次验证： 昨天
物品主要详细信息
状况：
Used
运行状况:
未知
产品编号：
154424
晶圆尺寸：
12"/300mm
年份：
未知
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
说明
无说明配置
无配置OEM 型号描述
Certas LEAGA™ is an environment-friendly, high-throughput gas chemical etch system designed for 300mm wafers that provides surface etch and cleaning without the use of liquids. Its dry processing features watermark-free, unique selectivity performance over various SiO2 films and precise control of interface cleaning. It offers greater flexibility when combined with TEL’s cleaning system. Certas LEAGA™ supports a number of isotropic process requirements for 3D-structure devices with high utilization capability and low cost operation through its plasma-free solution. Up to six dual-wafer processing chambers can be installed on a single platform to satisfy various process requirements. Easily configurable process units enable device scaling and enhanced productivity. Certas LEAGA™ provides highly precise process solutions such as surface pre-cleaning of Si contact formation, oxide film removal and etch back, selective etch in high-aspect 3D structure, and precise recess process, and has been widely adopted by global semiconductor manufacturers from volume manufacturing to next generation development.文件
无文件