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APPLIED MATERIALS (AMAT) CENTURA ACP EPI
  • APPLIED MATERIALS (AMAT) CENTURA ACP EPI
  • APPLIED MATERIALS (AMAT) CENTURA ACP EPI
  • APPLIED MATERIALS (AMAT) CENTURA ACP EPI
说明
EPI SiGe 300MM RPS
配置
无配置
OEM 型号描述
Applied Materials Centura Epi system is a production-proven, single-wafer, multi-chamber epitaxial silicon deposition product. Each radiantly-heated process chamber delivers precise and repeatable control of deposition conditions and 100% slip free films, excellent film thickness and resistivity uniformity, and low defect levels. The system’s wide range of temperatures and pressures, excellent temperature uniformity, and flexible gas panel configurations enable advanced low-temperature epitaxial and polycrystalline deposition processes, including germanium and silicon-germanium. In addition, the ability to configure up to three process chambers and hardware optimized for superior in-situ chamber cleaning deliver market-leading throughput density and low cost of ownership.
文件

无文件

类别
Epitaxial deposition (EPI)

上次验证: 28 天前

物品主要详细信息

状况:

Used


运行状况:

未知


产品编号:

128058


晶圆尺寸:

12"/300mm


年份:

未知


Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available

APPLIED MATERIALS (AMAT)

CENTURA ACP EPI

verified-listing-icon
已验证
类别
Epitaxial deposition (EPI)
上次验证: 28 天前
listing-photo-0d1f2d2cca1d4358884fc13a53f788dd-https://d2pkkbyngq3xpw.cloudfront.net/moov_media/3.0-assets/photo-coming-soon-small.png
物品主要详细信息

状况:

Used


运行状况:

未知


产品编号:

128058


晶圆尺寸:

12"/300mm


年份:

未知


Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
说明
EPI SiGe 300MM RPS
配置
无配置
OEM 型号描述
Applied Materials Centura Epi system is a production-proven, single-wafer, multi-chamber epitaxial silicon deposition product. Each radiantly-heated process chamber delivers precise and repeatable control of deposition conditions and 100% slip free films, excellent film thickness and resistivity uniformity, and low defect levels. The system’s wide range of temperatures and pressures, excellent temperature uniformity, and flexible gas panel configurations enable advanced low-temperature epitaxial and polycrystalline deposition processes, including germanium and silicon-germanium. In addition, the ability to configure up to three process chambers and hardware optimized for superior in-situ chamber cleaning deliver market-leading throughput density and low cost of ownership.
文件

无文件