说明
Target Substrate 4H-SiC Hot Wall CVD Wafer Size 100 mm (4") / 150 mm (6") — Growth Rate > 50 μm / hour High-speed growth Continuous Growth Thickness Up to 150 μm Continuous deposition capable Throughput 4 wafers / hour Based on 10 μm SiC epi Wafer In-plane Temp. Uniformity (4") < 1 °C — Wafer In-plane Temp. Uniformity (6") < 2 °C — Thickness Uniformity < 2 % (σ/mean) E.E = 3 mm Doping Concentration Uniformity < 4 % (σ/mean) E.E = 6 mm Defect Density < 0.02 / cm2 Low-defect Reactor Type Hot-wall CVD Single-wafer Heating Method Resistive Heating Side + bottom Gas Inlet Upper Gas Inlet Nozzle position adjustable Wafer Rotation High-speed Rotation Ensures uniformity Wafer Transfer Cassette-to-Cassette Auto Transfer Robotic auto transfer High-Temp Handling High-temperature wafer handling supported Improves productivity Source Gas SiHCl3 (TCS), SiH2Cl2 (DCS) Silicon source Carrier Gas H2 Hydrogen Etching Gas HCl — Doping Gas N2 (n-type) / TMA (p-type) Common usage配置
SIC EpitaxialOEM 型号描述
single-wafer SiC Epitaxial Reactor文件
无文件
类别
Epitaxial deposition (EPI)
上次验证： 30 多天前
物品主要详细信息
状况：
Used
运行状况:
未知
产品编号：
150879
晶圆尺寸：
6"/150mm
年份：
未知
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
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NUFLARE
EPIREVO S6
类别
Epitaxial deposition (EPI)
上次验证： 30 多天前
物品主要详细信息
状况：
Used
运行状况:
未知
产品编号：
150879
晶圆尺寸：
6"/150mm
年份：
未知
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
说明
Target Substrate 4H-SiC Hot Wall CVD Wafer Size 100 mm (4") / 150 mm (6") — Growth Rate > 50 μm / hour High-speed growth Continuous Growth Thickness Up to 150 μm Continuous deposition capable Throughput 4 wafers / hour Based on 10 μm SiC epi Wafer In-plane Temp. Uniformity (4") < 1 °C — Wafer In-plane Temp. Uniformity (6") < 2 °C — Thickness Uniformity < 2 % (σ/mean) E.E = 3 mm Doping Concentration Uniformity < 4 % (σ/mean) E.E = 6 mm Defect Density < 0.02 / cm2 Low-defect Reactor Type Hot-wall CVD Single-wafer Heating Method Resistive Heating Side + bottom Gas Inlet Upper Gas Inlet Nozzle position adjustable Wafer Rotation High-speed Rotation Ensures uniformity Wafer Transfer Cassette-to-Cassette Auto Transfer Robotic auto transfer High-Temp Handling High-temperature wafer handling supported Improves productivity Source Gas SiHCl3 (TCS), SiH2Cl2 (DCS) Silicon source Carrier Gas H2 Hydrogen Etching Gas HCl — Doping Gas N2 (n-type) / TMA (p-type) Common usage配置
SIC EpitaxialOEM 型号描述
single-wafer SiC Epitaxial Reactor文件
无文件