说明
CrystalFlex HPVE Reactor furnace GaN wafer for R&D and/or Production配置
SPECS: Growth rate - Up to 200 microns/hour Growth pressure - Atmospheric operation Maximum Furnace Temp - 1200°C Carrier gas - Inert gas of N2 or Ar Reactant Gas - HCl and NH Wafer capacity Wafer size - Max Load 50mm - 12 75mm - 4 100mm - 3 150mm - 1OEM 型号描述
Multi-Wafer Hydride Vapor Phase Epitaxy (HVPE) Reactor文件
无文件
OXFORD
CrystalFlex
已验证
类别
Epitaxial deposition (EPI)
上次验证： 60 多天前
物品主要详细信息
状况：
Used
运行状况:
未知
产品编号：
89778
晶圆尺寸：
6"/150mm
年份：
2009
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
OXFORD
CrystalFlex
类别
Epitaxial deposition (EPI)
上次验证： 60 多天前
物品主要详细信息
状况：
Used
运行状况:
未知
产品编号：
89778
晶圆尺寸：
6"/150mm
年份：
2009
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
说明
CrystalFlex HPVE Reactor furnace GaN wafer for R&D and/or Production配置
SPECS: Growth rate - Up to 200 microns/hour Growth pressure - Atmospheric operation Maximum Furnace Temp - 1200°C Carrier gas - Inert gas of N2 or Ar Reactant Gas - HCl and NH Wafer capacity Wafer size - Max Load 50mm - 12 75mm - 4 100mm - 3 150mm - 1OEM 型号描述
Multi-Wafer Hydride Vapor Phase Epitaxy (HVPE) Reactor文件
无文件