说明
Etch shallow and deep SiC materials from small pieces up to 4in wafer size配置
Etched: SiO2, quartz, Pyrex, fused silica, Si3N4, bulk silicon Masks: Si, PR & Metals (Cr, Ti, Ni) 3000W 13.56MHz AE – Coil 1000W 13.56MHz ENI – Platen Backside Helium Cooling with Standard 8-pin clamp & lip seal C4F8, SF6, O2, H2, CF4, two open gas slots 2-80mT Process Pressure Platen -20°C to 120°C, Walls 100°C, Lid 120°C 2.5µm isolated trenches on 8-10µm TEOS Etch rate greater than 2000Å/min SiO2, greater than 4:1 selectivity SiO2: PR, etch rate variability intra- and inter-wafer ±3%, sidewalls 85-90° 5µm features on 3-10µm SiO2 Etch rate greater than 3000Å/min SiO2, greater than 7.5:1 selectivity SiO2:PR, etch rate variability intra- and inter-wafer ±2%, sidewalls 89-90° Converted to 100mm w/ ceramic parts (from quartz)OEM 型号描述
未提供文件
无文件
STS
MESC MULTIPLEX AOE
已验证
类别
Etch/Asher
上次验证： 60 多天前
物品主要详细信息
状况：
Used
运行状况:
未知
产品编号：
73234
晶圆尺寸：
2"/50mm, 4"/100mm, 6"/150mm
年份：
未知
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
STS
MESC MULTIPLEX AOE
类别
Etch/Asher
上次验证： 60 多天前
物品主要详细信息
状况：
Used
运行状况:
未知
产品编号：
73234
晶圆尺寸：
2"/50mm, 4"/100mm, 6"/150mm
年份：
未知
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
说明
Etch shallow and deep SiC materials from small pieces up to 4in wafer size配置
Etched: SiO2, quartz, Pyrex, fused silica, Si3N4, bulk silicon Masks: Si, PR & Metals (Cr, Ti, Ni) 3000W 13.56MHz AE – Coil 1000W 13.56MHz ENI – Platen Backside Helium Cooling with Standard 8-pin clamp & lip seal C4F8, SF6, O2, H2, CF4, two open gas slots 2-80mT Process Pressure Platen -20°C to 120°C, Walls 100°C, Lid 120°C 2.5µm isolated trenches on 8-10µm TEOS Etch rate greater than 2000Å/min SiO2, greater than 4:1 selectivity SiO2: PR, etch rate variability intra- and inter-wafer ±3%, sidewalls 85-90° 5µm features on 3-10µm SiO2 Etch rate greater than 3000Å/min SiO2, greater than 7.5:1 selectivity SiO2:PR, etch rate variability intra- and inter-wafer ±2%, sidewalls 89-90° Converted to 100mm w/ ceramic parts (from quartz)OEM 型号描述
未提供文件
无文件