说明
Vertical Furnace配置
无配置OEM 型号描述
The c.ACTIVATOR 150 is a high-temperature furnace developed by centrotherm for annealing SiC and other materials in Ar, N2, and H2 ambient. It is designed for high-volume SiC device manufacturing, with two versions available that can handle wafer sizes up to 200 mm. The unique all-metal-free design of the process tube and heating system allows for process temperatures up to 2000°C. The main application of the c.ACTIVATOR 150 is electrical activation by post-implantation annealing for SiC MOSFET and diode manufacturing at high temperatures of up to 2000°C. Other applications include high-temperature hydrogen annealing to smooth, clean, and round trenches after RIE etching in trench MOSFET manufacturing; cost-efficient dopant activation in GaN wafers at 1150-1250°C; and annealing of AlN seed layers and AlN epitaxial layers at ~1700°C. Overall, the c.ACTIVATOR 150 is a versatile tool for high-temperature annealing applications in semiconductor device manufacturing.文件
无文件
类别
Furnaces / Diffusion
上次验证： 19 天前
物品主要详细信息
状况：
Used
运行状况:
未知
产品编号：
147639
晶圆尺寸：
6"/150mm
年份：
未知
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
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CENTROTHERM
c.ACTIVATOR 150
类别
Furnaces / Diffusion
上次验证： 19 天前
物品主要详细信息
状况：
Used
运行状况:
未知
产品编号：
147639
晶圆尺寸：
6"/150mm
年份：
未知
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
说明
Vertical Furnace配置
无配置OEM 型号描述
The c.ACTIVATOR 150 is a high-temperature furnace developed by centrotherm for annealing SiC and other materials in Ar, N2, and H2 ambient. It is designed for high-volume SiC device manufacturing, with two versions available that can handle wafer sizes up to 200 mm. The unique all-metal-free design of the process tube and heating system allows for process temperatures up to 2000°C. The main application of the c.ACTIVATOR 150 is electrical activation by post-implantation annealing for SiC MOSFET and diode manufacturing at high temperatures of up to 2000°C. Other applications include high-temperature hydrogen annealing to smooth, clean, and round trenches after RIE etching in trench MOSFET manufacturing; cost-efficient dopant activation in GaN wafers at 1150-1250°C; and annealing of AlN seed layers and AlN epitaxial layers at ~1700°C. Overall, the c.ACTIVATOR 150 is a versatile tool for high-temperature annealing applications in semiconductor device manufacturing.文件
无文件