概述

"Designed for the emerging 300mm market, Quantum utilizes the differential lens technology of the xRLEAP system. Enhanced beam optics further improve the low-energy productivity over the xRLEAP system. High beam currents combined with fast auto-tune capability make Quantum the most effective ion implanter for 130nm and below applications in the industry. New technology for energy control ensures excellent energy accuracy and ultra-low energy implants to a remarkable ±7.5 volts. Quantum is a production-proven platform capable of performing conductive doping for several device generations into the future. The Quantum series of implanters are used for ""conductive"" implant applications traditionally performed by high-current implant systems. The Quantum series includes the Quantum 80 and 120 (2 keV to 80/120 keV) and the Quantum LEAP system that extends ultra-low-energy performance to 200eV. All Quantum systems use a small-footprint platform that bridges 200mm and 300mm wafer sizes. The system's extremely short beam path minimizes beam ""blow up'' and energy contamination with new technology that ensures energy accuracy and control to ±0.5% for ultra-low energy implants. Although the Quantum beamline excels at low energy implantation, the system also provides excellent performance in mid-energy (10-80keV) implants. Its high current levels give high production throughput and lower cost of ownership. The market-leading Quantum LEAP system has been rapidly accepted by chipmakers in all regions for ultra-shallow junction formation, enabling smaller transistors and higher device speeds