概述

The xR LEAP is the industry’s first sub-keV ion implanter that utilizes patented differential lens technology to achieve beam currents as low as 200eV. This paves the way for ultra-shallow junction development required in advanced 0.18µm and 0.13µm devices. The enhancements built into the xRS Series implanters result in higher throughput, with 235 wafers per hour for 200mm and 220 wafers per hour for 300mm, and lower cost of ownership.