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说明
-Recently De-installed配置
无配置OEM 型号描述
The SEN Corporation / Sumitomo NV-GSD-HC3 is a high current ion implantation system designed for the efficient and high-volume production of devices such as DRAMs using 300 mm wafers. This model excels in ultra-low energy applications, offering implantation energy as low as 0.2 keV up to 80 keV. It ensures high current with minimal energy contamination through a deceleration mechanism, making it suitable for delicate processes down to 0.2 keV. The system features a high-performance, long-life ion source (ELS) for consistent performance. It provides high accuracy of implantation with excellent beam quality, minimizing metal contamination and cross-contamination using advanced technologies like the VSD (Virtual Slit Disk) and TSDF (Triple Surface Disk Faraday). Additionally, a plasma shower system minimizes charge buildup, enhancing process stability.文件
无文件
类别
High Current
上次验证： 60 多天前
物品主要详细信息
状况：
Used
运行状况:
Deinstalled
产品编号：
118003
晶圆尺寸：
12"/300mm
年份：
未知
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
SEN CORPORATION / SUMITOMO
NV GSD HC3
类别
High Current
上次验证： 60 多天前
物品主要详细信息
状况：
Used
运行状况:
Deinstalled
产品编号：
118003
晶圆尺寸：
12"/300mm
年份：
未知
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
说明
-Recently De-installed配置
无配置OEM 型号描述
The SEN Corporation / Sumitomo NV-GSD-HC3 is a high current ion implantation system designed for the efficient and high-volume production of devices such as DRAMs using 300 mm wafers. This model excels in ultra-low energy applications, offering implantation energy as low as 0.2 keV up to 80 keV. It ensures high current with minimal energy contamination through a deceleration mechanism, making it suitable for delicate processes down to 0.2 keV. The system features a high-performance, long-life ion source (ELS) for consistent performance. It provides high accuracy of implantation with excellent beam quality, minimizing metal contamination and cross-contamination using advanced technologies like the VSD (Virtual Slit Disk) and TSDF (Triple Surface Disk Faraday). Additionally, a plasma shower system minimizes charge buildup, enhancing process stability.文件
无文件