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SEN CORPORATION / SUMITOMO NV GSD HE3
  • SEN CORPORATION / SUMITOMO NV GSD HE3
  • SEN CORPORATION / SUMITOMO NV GSD HE3
  • SEN CORPORATION / SUMITOMO NV GSD HE3
说明
High Energy Implanter
配置
无配置
OEM 型号描述
The SEN CORPORATION / SUMITOMO NV-GSD HE3 is an ion implanter that uses high-energy and was developed by SEN Corporation. It is an improved version of the NV-GSD-HE3, with the addition of six RF resonators to the beam line. The system is configured for 300mm wafers and can accelerate boron ions up to 2 MeV with a beam current of 0.75 mA, as well as phosphorus ions up to 4.4 MeV with a beam current of 0.35 mA. Its primary use is in the image sensor market, where it increases the depth of CCD photodiodes in the wafer surface, allowing for higher pixel density in image sensors. The system also features a state-of-the-art beam profile controller for optimizing implant damage and micro-uniformity.
文件

无文件

类别
Medium Current

上次验证: 60 多天前

物品主要详细信息

状况:

Used


运行状况:

未知


产品编号:

119742


晶圆尺寸:

12"/300mm


年份:

未知


Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available

SEN CORPORATION / SUMITOMO

NV GSD HE3

verified-listing-icon
已验证
类别
Medium Current
上次验证: 60 多天前
listing-photo-91403d23231e4671bf6080ed086ccb16-https://d2pkkbyngq3xpw.cloudfront.net/moov_media/3.0-assets/photo-coming-soon-small.png
物品主要详细信息

状况:

Used


运行状况:

未知


产品编号:

119742


晶圆尺寸:

12"/300mm


年份:

未知


Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
说明
High Energy Implanter
配置
无配置
OEM 型号描述
The SEN CORPORATION / SUMITOMO NV-GSD HE3 is an ion implanter that uses high-energy and was developed by SEN Corporation. It is an improved version of the NV-GSD-HE3, with the addition of six RF resonators to the beam line. The system is configured for 300mm wafers and can accelerate boron ions up to 2 MeV with a beam current of 0.75 mA, as well as phosphorus ions up to 4.4 MeV with a beam current of 0.35 mA. Its primary use is in the image sensor market, where it increases the depth of CCD photodiodes in the wafer surface, allowing for higher pixel density in image sensors. The system also features a state-of-the-art beam profile controller for optimizing implant damage and micro-uniformity.
文件

无文件