概述

The VIISta 810 HP provides precise total incident angle and dosimetry control to enable tighter distribution of electrical device parameters and a 50% reduction in contamination to enhance device yields. The generic VIISta platform covers the range of ion implantation energies from 200eV through to 3.75 MeV. For medium current implants in the middle of that range, the VIISta 810 HP provides control of Vt and halo implants, improving the consistency of operating characteristics and yield across the wafer, the company claimed.