说明
无说明配置
Type: GaN MOCVD Version: 2 INCH x 42, 4 INCH x 11, 6 INCH x 6 Capacity: 6"×6 or 4"×11 or 2"×24 Susceptor dimension: D520mm×T19mm Chamber coil (9 channels) Hydride Line : 1xNH3, 2xDopant Purifier: H2, N2, NH3 Pump : DOR pump(SH-110), Ebara pump(ESA70) With: H2 Purifier (IN LINE Type) Maker TERATECH Model TPH-LP-500S(100S) Gas: Hydrogen Process Methods: Line Purifier Flow Rate(Nm³/hr) : 10.30.50.75.100.150.300 Impurities Removed: H₂.O₂.H₂O.CO.CO₂OEM 型号描述
The AIXTRON AIX 2800 G4 HT (High-Temperature) is an advanced metal-organic chemical vapor deposition (MOCVD) system developed by AIXTRON SE. It is designed specifically for high-temperature processing and the epitaxial growth of compound semiconductor materials.文件
无文件
AIXTRON
AIX 2800 G4 HT
已验证
类别
MOCVD
物品主要详细信息
状况：
Used
运行状况:
未知
产品编号：
24142
晶圆尺寸：
未知
年份：
2010
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
AIXTRON
AIX 2800 G4 HT
已验证
类别
MOCVD
上次验证： 60 多天前
物品主要详细信息
状况：
Used
运行状况:
未知
产品编号：
24142
晶圆尺寸：
未知
年份：
2010
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
说明
无说明配置
Type: GaN MOCVD Version: 2 INCH x 42, 4 INCH x 11, 6 INCH x 6 Capacity: 6"×6 or 4"×11 or 2"×24 Susceptor dimension: D520mm×T19mm Chamber coil (9 channels) Hydride Line : 1xNH3, 2xDopant Purifier: H2, N2, NH3 Pump : DOR pump(SH-110), Ebara pump(ESA70) With: H2 Purifier (IN LINE Type) Maker TERATECH Model TPH-LP-500S(100S) Gas: Hydrogen Process Methods: Line Purifier Flow Rate(Nm³/hr) : 10.30.50.75.100.150.300 Impurities Removed: H₂.O₂.H₂O.CO.CO₂OEM 型号描述
The AIXTRON AIX 2800 G4 HT (High-Temperature) is an advanced metal-organic chemical vapor deposition (MOCVD) system developed by AIXTRON SE. It is designed specifically for high-temperature processing and the epitaxial growth of compound semiconductor materials.文件
无文件