说明
无说明配置
Configured for InP System equipped with EpiTT Hydride/Dopant Lines : NH3 × 2, Si2H6 x 1 (with dilution), Si2H6 x 1 MO Source Lines : TMGa-1, TMGa-2, TEGa-1,TEGa-2, TMAI-1, Cp2Mg- 1, Cp2Mg-2, TMIn-1, TMIn-2. Equipped with (4) RM 6S and (2) RM 25S thermal bathsOEM 型号描述
The AIXTRON AIX 2800 G4 HT (High-Temperature) is an advanced metal-organic chemical vapor deposition (MOCVD) system developed by AIXTRON SE. It is designed specifically for high-temperature processing and the epitaxial growth of compound semiconductor materials.文件
无文件
类别
MOCVD
上次验证： 60 多天前
物品主要详细信息
状况：
Used
运行状况:
Deinstalled
产品编号：
99356
晶圆尺寸：
未知
年份：
2010
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
AIXTRON
AIX 2800 G4 HT
类别
MOCVD
上次验证： 60 多天前
物品主要详细信息
状况：
Used
运行状况:
Deinstalled
产品编号：
99356
晶圆尺寸：
未知
年份：
2010
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
说明
无说明配置
Configured for InP System equipped with EpiTT Hydride/Dopant Lines : NH3 × 2, Si2H6 x 1 (with dilution), Si2H6 x 1 MO Source Lines : TMGa-1, TMGa-2, TEGa-1,TEGa-2, TMAI-1, Cp2Mg- 1, Cp2Mg-2, TMIn-1, TMIn-2. Equipped with (4) RM 6S and (2) RM 25S thermal bathsOEM 型号描述
The AIXTRON AIX 2800 G4 HT (High-Temperature) is an advanced metal-organic chemical vapor deposition (MOCVD) system developed by AIXTRON SE. It is designed specifically for high-temperature processing and the epitaxial growth of compound semiconductor materials.文件
无文件