说明
System with EFEM配置
GaN MOCVDOEM 型号描述
Veeco’s Propel™ MOCVD system is designed as a flexible platform for early stage research and development and small production needs for nitride applications. The reactor is capable of processing 9×2”, 3×4”, 1×6” and 1×8” on various substrates such as silicon, sapphire and silicon carbide without any hardware modification between runs.The system deposits high-quality GaN films for multiple applications such as power, RF, & photonics. The R200 reactor is based on Veeco’s leading TurboDisc® design including the IsoFlange™ and SymmHeat™ technologies that provide laminar flow and uniform temperature profile across the entire wafer. Customers can easily transfer processes from Veeco D180, K465i™ or MaxBright™ systems to the Propel GaN MOCVD platform.文件
无文件
VEECO
Propel
类别
MOCVD
上次验证： 14 天前
物品主要详细信息
状况：
Used
运行状况:
未知
产品编号：
146156
晶圆尺寸：
12"/300mm
年份：
2020
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
说明
System with EFEM配置
GaN MOCVDOEM 型号描述
Veeco’s Propel™ MOCVD system is designed as a flexible platform for early stage research and development and small production needs for nitride applications. The reactor is capable of processing 9×2”, 3×4”, 1×6” and 1×8” on various substrates such as silicon, sapphire and silicon carbide without any hardware modification between runs.The system deposits high-quality GaN films for multiple applications such as power, RF, & photonics. The R200 reactor is based on Veeco’s leading TurboDisc® design including the IsoFlange™ and SymmHeat™ technologies that provide laminar flow and uniform temperature profile across the entire wafer. Customers can easily transfer processes from Veeco D180, K465i™ or MaxBright™ systems to the Propel GaN MOCVD platform.文件
无文件