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LAM RESEARCH / NOVELLUS CONCEPT ONE "C1"
    说明
    无说明
    配置
    P-TEOS model and includes DP as well.
    OEM 型号描述
    The Novellus Concept-One is a PECVD tool that uses plasma-enhanced chemical vapor deposition to deposit various dielectric films on silicon wafers. It can deposit oxide, nitride, oxynitride, PSG and TEOS oxide films. The Concept1 is also a PECVD tool that deposits dielectric films on 6" wafers. It is capable of depositing thick films in excess of 1 um and allows CMOS compatible metals, making it suitable for backend processes. The system deposits on multiple wafers in parallel in a batch-type reactor.
    文件

    无文件

    LAM RESEARCH / NOVELLUS

    CONCEPT ONE "C1"

    verified-listing-icon

    已验证

    类别
    PECVD

    上次验证: 30 多天前

    物品主要详细信息

    状况:

    Used


    运行状况:

    未知


    产品编号:

    116420


    晶圆尺寸:

    6"/150mm


    年份:

    1995


    Have Additional Questions?
    Logistics Support
    Available
    Money Back Guarantee
    Available
    Transaction Insured by Moov
    Available
    Refurbishment Services
    Available
    类似上架物品
    查看全部
    LAM RESEARCH / NOVELLUS CONCEPT ONE "C1"

    LAM RESEARCH / NOVELLUS

    CONCEPT ONE "C1"

    PECVD
    年份: 1995状况: 二手
    上次验证30 多天前

    LAM RESEARCH / NOVELLUS

    CONCEPT ONE "C1"

    verified-listing-icon
    已验证
    类别
    PECVD
    上次验证: 30 多天前
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    物品主要详细信息

    状况:

    Used


    运行状况:

    未知


    产品编号:

    116420


    晶圆尺寸:

    6"/150mm


    年份:

    1995


    Have Additional Questions?
    Logistics Support
    Available
    Money Back Guarantee
    Available
    Transaction Insured by Moov
    Available
    Refurbishment Services
    Available
    说明
    无说明
    配置
    P-TEOS model and includes DP as well.
    OEM 型号描述
    The Novellus Concept-One is a PECVD tool that uses plasma-enhanced chemical vapor deposition to deposit various dielectric films on silicon wafers. It can deposit oxide, nitride, oxynitride, PSG and TEOS oxide films. The Concept1 is also a PECVD tool that deposits dielectric films on 6" wafers. It is capable of depositing thick films in excess of 1 um and allows CMOS compatible metals, making it suitable for backend processes. The system deposits on multiple wafers in parallel in a batch-type reactor.
    文件

    无文件

    类似上架物品
    查看全部
    LAM RESEARCH / NOVELLUS CONCEPT ONE "C1"

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    CONCEPT ONE "C1"

    PECVD年份: 1995状况: 二手上次验证:30 多天前
    LAM RESEARCH / NOVELLUS CONCEPT ONE "C1"

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    LAM RESEARCH / NOVELLUS CONCEPT ONE "C1"

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    PECVD年份: 1998状况: 二手上次验证:60 多天前