说明
无说明配置
Plasma Enhanced CVD system (PECVD) Deposition of SiO2, Si3N4 and a-Si RF power: 0-400 W ICP power: 0-1300 W Temperatures: RT to 300°C Gases available: Ar, SiH4, NH3, N2, O2, NF3, N2O He for substrate heat transfer Maximum wafer size: 4"OEM 型号描述
Plasma Enhanced CVD system (PECVD)文件
无文件
MICROSYSTEMS
MICROSYS 200
已验证
类别
PECVD
上次验证： 60 多天前
物品主要详细信息
状况：
Used
运行状况:
未知
产品编号：
97600
晶圆尺寸：
4"/100mm
年份：
未知
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
MICROSYSTEMS
MICROSYS 200
类别
PECVD
上次验证： 60 多天前
物品主要详细信息
状况：
Used
运行状况:
未知
产品编号：
97600
晶圆尺寸：
4"/100mm
年份：
未知
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
说明
无说明配置
Plasma Enhanced CVD system (PECVD) Deposition of SiO2, Si3N4 and a-Si RF power: 0-400 W ICP power: 0-1300 W Temperatures: RT to 300°C Gases available: Ar, SiH4, NH3, N2, O2, NF3, N2O He for substrate heat transfer Maximum wafer size: 4"OEM 型号描述
Plasma Enhanced CVD system (PECVD)文件
无文件