说明
无说明配置
Plasma Enhanced CVD system (PECVD) Deposition of SiO2, Si3N4 and a-Si RF power: 0-400 W ICP power: 0-1300 W Temperatures: RT to 300°C Gases available: Ar, SiH4, NH3, N2, O2, NF3, N2O He for substrate heat transfer Maximum wafer size: 4"OEM 型号描述
Plasma Enhanced CVD system (PECVD)文件
无文件
类别
PECVD
上次验证： 60 多天前
物品主要详细信息
状况：
Used
运行状况:
未知
产品编号：
97600
晶圆尺寸：
4"/100mm
年份：
未知
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
MICROSYSTEMS
MICROSYS 200
类别
PECVD
上次验证： 60 多天前
物品主要详细信息
状况：
Used
运行状况:
未知
产品编号：
97600
晶圆尺寸：
4"/100mm
年份：
未知
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
说明
无说明配置
Plasma Enhanced CVD system (PECVD) Deposition of SiO2, Si3N4 and a-Si RF power: 0-400 W ICP power: 0-1300 W Temperatures: RT to 300°C Gases available: Ar, SiH4, NH3, N2, O2, NF3, N2O He for substrate heat transfer Maximum wafer size: 4"OEM 型号描述
Plasma Enhanced CVD system (PECVD)文件
无文件