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PLASMATHERM LAPECVD
  • PLASMATHERM LAPECVD
  • PLASMATHERM LAPECVD
  • PLASMATHERM LAPECVD
  • PLASMATHERM LAPECVD
  • PLASMATHERM LAPECVD
  • PLASMATHERM LAPECVD
  • PLASMATHERM LAPECVD
说明
无说明
配置
Plasma Enhanced Chemical Vapor Deposition System -PM3 Voltage:208 VOLTS Frequency:50/60 HERTZ Phase:3 Current:63 AMPS Dimensions: Standard Overall: 83 x 46 x 89 IN - 1500 LBS
OEM 型号描述
Plasma-Therm’s LAPECVD™ (Large Area Plasma Enhanced Chemical Vapor Deposition) uses a cassette-to-cassette configuration to allow for high-volume production in a wide range of applications. The LAPECVD™ platform can be used to deposit a variety of thin-film materials with its parallel-plate plasma deposition system. Hardware: -Cassette-to-Cassette Handling: - Multi-substrate batch processing -Dual cassettes -Platen heating up to 350°C -Upper electrode RF power at 13.56 MHz with optional MFD -Up to 8 gas channels with digital MFCs -Thermally managed reactor design—up to 175°C for internal walls and shower head
文件

无文件

类别
PECVD

上次验证: 60 多天前

物品主要详细信息

状况:

Used


运行状况:

未知


产品编号:

62674


晶圆尺寸:

未知


年份:

2009


Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available

PLASMATHERM

LAPECVD

verified-listing-icon
已验证
类别
PECVD
上次验证: 60 多天前
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物品主要详细信息

状况:

Used


运行状况:

未知


产品编号:

62674


晶圆尺寸:

未知


年份:

2009


Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
说明
无说明
配置
Plasma Enhanced Chemical Vapor Deposition System -PM3 Voltage:208 VOLTS Frequency:50/60 HERTZ Phase:3 Current:63 AMPS Dimensions: Standard Overall: 83 x 46 x 89 IN - 1500 LBS
OEM 型号描述
Plasma-Therm’s LAPECVD™ (Large Area Plasma Enhanced Chemical Vapor Deposition) uses a cassette-to-cassette configuration to allow for high-volume production in a wide range of applications. The LAPECVD™ platform can be used to deposit a variety of thin-film materials with its parallel-plate plasma deposition system. Hardware: -Cassette-to-Cassette Handling: - Multi-substrate batch processing -Dual cassettes -Platen heating up to 350°C -Upper electrode RF power at 13.56 MHz with optional MFD -Up to 8 gas channels with digital MFCs -Thermally managed reactor design—up to 175°C for internal walls and shower head
文件

无文件