说明
SI 500D ICP Plasma system for Coating (PECVD) and Etching (RIE) Two Aluminum Carriers Ø 200 mm with Coupling to He Backside Cooling for: 1. 4 x 1 Glass Substrates Height of 1.1 mm Maximum clamp overlap 3.5 mm on each side 2. Flexible Foil Substrates with 200 mm diameter Height of 50-200 µm Maximum clamp overlap 5.0 mm on each side HF Generator 13.56 MHz, 300 W for the Bias at the Substrate Electrode, incl. Matchbox Liquid Precursor System for 2 Liquid Precursors Precursor System for plasma-enhanced deposition (e.g., SiO2 with TEOS and SiN with ... Reactor Heater Suspended Quartz Plate with Opening for in-situ Diagnostics Laser Interferometer with CCD Camera, for Control of the Layer Thickness. Field of View 1.5 mm×1.5 mm. Integration of the SI 500 D Load Lock into an existing N2 -Glovebox from GS Glovebox Systemtechnik Glovebox Size: 1240 mm×725 mm×900 mm. Processes supplied with the SI 500 D system: 1. ICP-CVD-Deposition of SiO2 2. ICP-CVD-Deposition of Si3N4 3. ICP-RIE of SiO2 4. ICP-RIE of Si3N4配置
• thin-film deposition • encapsulation • coating • e.g. SiO2, SiNx, SiONx, a-Si • up to 200 mm wafers • glovebox for high purity sample loadingOEM 型号描述
未提供文件
SENTECH
SI 500 D
类别
PECVD
上次验证： 17 天前
物品主要详细信息
状况：
Used
运行状况:
Installed / Down
产品编号：
117179
晶圆尺寸：
8"/200mm
年份：
未知
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available